ROHM RS3E095BNGZETB MOSFETs
MOSFET N-CHANNEL 30V 9.5A 8SOP
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
RS3E095BNGZETB
Detailed Description
MOSFET N-CHANNEL 30V 9.5A 8SOP
Package
8-SOP
Lifecycle Status
Active
Datasheet
RS3E095BNGZETB Datasheet
Quick Jump:
Technical Specifications
ROHM RS3E095BNGZETB MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
30 V
ID Continuous Drain Current
9.5 A
Rds on Drain Source Resistance
11.9 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (RS3E095BNGZETB vs SH8J66TB1 vs RSH065N06TB1 vs SH8J65TB1)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | SMD/SMT |
| Operating Temperature | - 55°C ~ + 150°C | + 150°C | - 55°C ~ + 150°C | - 55°C ~ + 150°C |
| RoHS | Yes | Yes | Yes | Yes |
| Forward Transconductance Min | 6.5 S | 11 S | 4 S | 6 S |
| ID Continuous Drain Current | 9.5 A | 9 A | 6.5 A | 7 A |
| Package | 8-SOP | 8-SOP | 8-SOP | 8-SOP |
| Part Aliases | RS3E095BN | SH8J66 | RSH065N06 | SH8J65 |
| Pd Power Dissipation | 2 W | 2 W | 2 W | 2 W |
| Rds on Drain Source Resistance | 11.9 mOhms | 19 mOhms | 31 mOhms | 31 mOhms |
| Technology | Si | Si | Si | Si |
| Transistor Polarity | N-Channel | P-Channel | N-Channel | P-Channel |
| Unit Weight | 0.002926 oz | 0.002926 oz | 0.002926 oz | 0.002926 oz |
| Action |
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