onsemi SMMBTA56LT1G BJTs
PNP BJT Transistor, 80V, 500mA, SOT-23-3
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SMMBTA56LT1G
Base Model
Detailed Description
PNP BJT Transistor, 80V, 500mA, SOT-23-3
Package
TO-236-3, SC-59, SOT-23-3
Lifecycle Status
Active
Datasheet
SMMBTA56LT1G Datasheet
Quick Jump:
Technical Specifications
onsemi SMMBTA56LT1G BJTs technical specifications.
General
RoHS
Yes
Package / Case
TO-236-3, SC-59, SOT-23-3
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Power Max
225 mW
Frequency Transition
50MHz
Grade
Automotive
Transistor Type
PNP
Qualification
AEC-Q101
Alternate Parts Comparison (SMMBTA56LT1G vs SMMBTA56LT3G vs SMMBTA42LT1G vs SMMBTA13LT1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Lifecycle Status | Active | Active | Active | Active |
| Current Collector Cutoff Max | 100nA | 100nA | 100nA (ICBO) | 100nA (ICBO) |
| Current Collector IC Max | 500 mA | 500 mA | 500 mA | 300 mA |
| Dc Current Gain Hfe Min IC Vce | 100 @ 100mA, 1V | 100 @ 100mA, 1V | 40 @ 30mA, 10V | 10000 @ 100mA, 5V |
| Frequency Transition | 50MHz | 50MHz | 50MHz | 125MHz |
| Power Max | 225 mW | 225 mW | 225 mW | 225 mW |
| Transistor Type | PNP | PNP | NPN | NPN - Darlington |
| Vce Saturation Max Ib IC | 250mV @ 10mA, 100mA | 250mV @ 10mA, 100mA | 500mV @ 2mA, 20mA | 1.5V @ 100µA, 100mA |
| Voltage Collector Emitter Breakdown Max | 80 V | 80 V | 300 V | 30 V |
| Action |
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