onsemi NSVMMUN2230LT1G BJTs
NPN Bipolar Digital Transistor (BRT), 3000-REEL
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NSVMMUN2230LT1G
Detailed Description
NPN Bipolar Digital Transistor (BRT), 3000-REEL
Package
TO-236-3, SC-59, SOT-23-3
Lifecycle Status
Active
Datasheet
NSVMMUN2230LT1G Datasheet
Quick Jump:
Technical Specifications
onsemi NSVMMUN2230LT1G BJTs technical specifications.
General
Package / Case
TO-236-3, SC-59, SOT-23-3
Mounting Type
Surface Mount
Lifecycle Status
Active
Description
TRANS PREBIAS NPN 50V SOT23-3
Detailed Description
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 246 mW Surface Mount SOT-23-3 (TO-236)
Dc Current Gain Hfe Min IC Vce
3 @ 5mA, 10V
Vce Saturation Max Ib IC
250mV @ 5mA, 10mA
Current Collector Cutoff Max
500nA
Power Max
246 mW
Transistor Type
NPN - Pre-Biased
Alternate Parts Comparison (NSVMMUN2230LT1G vs NSVMMUN2112LT1G vs NSVMMUN2135LT1G vs SMMBFJ175LT1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Lifecycle Status | Active | Active | Active | Active |
| Description | TRANS PREBIAS NPN 50V SOT23-3 | TRANS PREBIAS PNP 50V SOT23-3 | TRANS PREBIAS PNP 50V SOT23-3 | JFET P-CH 30V SOT23-3 |
| Detailed Description | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 246 mW Surface Mount SOT-23-3 (TO-236) | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 246 mW Surface Mount SOT-23-3 (TO-236) | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 246 mW Surface Mount SOT-23-3 (TO-236) | JFET P-Channel 30 V 225 mW Surface Mount SOT-23-3 (TO-236) |
| Grade | Automotive | Automotive | Automotive | Automotive |
| Power Max | 246 mW | 246 mW | 246 mW | 225 mW |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Current Collector Cutoff Max | 500nA | 500nA | 500nA | -- |
| Current Collector IC Max | 100 mA | 100 mA | 100 mA | -- |
| Dc Current Gain Hfe Min IC Vce | 3 @ 5mA, 10V | 60 @ 5mA, 10V | 80 @ 5mA, 10V | -- |
| Resistor Base R1 | 1 kOhms | 22 kOhms | 2.2 kOhms | -- |
| Action |
More Parts in BJTs
Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.
NSVMMUN2135LT1GonsemiPNP Bipolar Digital Transistor (BRT) PNP Bipolar Digital Transistor (BRT), 3000-REEL