onsemi 50C02CH-TL-E BJTs
NPN BJT Transistor, 50V, 500mA, 500MHz, Low VCE(sat)
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
50C02CH-TL-E
Detailed Description
NPN BJT Transistor, 50V, 500mA, 500MHz, Low VCE(sat)
Package
TO-236-3, SC-59, SOT-23-3
Lifecycle Status
Active
Datasheet
50C02CH-TL-E Datasheet
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Technical Specifications
onsemi 50C02CH-TL-E BJTs technical specifications.
General
Package / Case
TO-236-3, SC-59, SOT-23-3
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
300 @ 10mA, 2V
Power Max
700 mW
Frequency Transition
500MHz
Transistor Type
NPN
Current Collector IC Max
500 mA
Voltage Collector Emitter Breakdown Max
50 V
Alternate Parts Comparison (50C02CH-TL-E vs MBT3906DW1T1G vs BC847CDW1T1G vs BC847CLT1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-236-3, SC-59, SOT-23-3 | 6-TSSOP | 6-TSSOP | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Lifecycle Status | Active | Production | Production | Production |
| Current Collector IC Max | 500 mA | 200mA | 100mA | 100 mA |
| Dc Current Gain Hfe Min IC Vce | 300 @ 10mA, 2V | 100 @ 10mA, 1V | 420 @ 2mA, 5V | 420 @ 2mA, 5V |
| Power Max | 700 mW | 150mW | 380mW | 300 mW |
| Transistor Type | NPN | 2 PNP (Dual) | 2 NPN (Dual) | NPN |
| Vce Saturation Max Ib IC | 100mV @ 10mA, 100mA | 400mV @ 5mA, 50mA | 600mV @ 5mA, 100mA | 600mV @ 5mA, 100mA |
| Voltage Collector Emitter Breakdown Max | 50 V | 40V | 45V | 45 V |
| Current Collector Cutoff Max | 100nA (ICBO) | -- | 15nA (ICBO) | 15nA (ICBO) |
| Number of Pins | -- | 6 | 6 | 3 |
| Action |
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