onsemi SMMBFJ175LT1G BJTs
P-Channel JFET Transistor, 30 V, 3000-REEL
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SMMBFJ175LT1G
Detailed Description
P-Channel JFET Transistor, 30 V, 3000-REEL
Package
TO-236-3, SC-59, SOT-23-3
Lifecycle Status
Active
Datasheet
SMMBFJ175LT1G Datasheet
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Technical Specifications
onsemi SMMBFJ175LT1G BJTs technical specifications.
General
Package / Case
TO-236-3, SC-59, SOT-23-3
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Resistance Rds on
125 Ohms
Power Max
225 mW
Grade
Automotive
Fet Type
P-Channel
Qualification
AEC-Q101
Voltage Breakdown V Br Gss
30 V
Alternate Parts Comparison (SMMBFJ175LT1G vs MUN2233T1G vs MUN2211T3G vs NSVBC857BLT3G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Lifecycle Status | Active | Active | Active | Active |
| Description | JFET P-CH 30V SOT23-3 | TRANS PREBIAS NPN 50V 0.1A SC59 | TRANS PREBIAS NPN 50V 0.1A SC59 | TRANS PNP 45V 0.1A SOT23-3 |
| Detailed Description | JFET P-Channel 30 V 225 mW Surface Mount SOT-23-3 (TO-236) | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 230 mW Surface Mount SC-59 | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 230 mW Surface Mount SC-59 | Bipolar (BJT) Transistor PNP 45 V 100 mA 100MHz 225 mW Surface Mount SOT-23-3 (TO-236) |
| Power Max | 225 mW | 230 mW | 230 mW | 225 mW |
| Current Collector Cutoff Max | -- | 500nA | 500nA | 15nA (ICBO) |
| Current Collector IC Max | -- | 100 mA | 100 mA | 100 mA |
| Dc Current Gain Hfe Min IC Vce | -- | 80 @ 5mA, 10V | 35 @ 5mA, 10V | 220 @ 2mA, 5V |
| Transistor Type | -- | NPN - Pre-Biased | NPN - Pre-Biased | PNP |
| Vce Saturation Max Ib IC | -- | 250mV @ 300µA, 10mA | 250mV @ 300µA, 10mA | 650mV @ 5mA, 100mA |
| Voltage Collector Emitter Breakdown Max | -- | 50 V | 50 V | 45 V |
| Action |
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