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onsemi SMMBTA42LT1G BJTs

High Voltage NPN Bipolar Transistor, SOT-23 (TO-236) 3 LEAD, 3000-REEL

3,658 ActiveonsemiSMMBTA42LTTO-236-3, SC-59, SOT-23-3$0.11
SMMBTA42LT1G - No Image Available

Same model may have multiple batches, images only for reference.

SMMBTA42LT1G
Manufacturer
Part Number (MPN)
SMMBTA42LT1G
Base Model
Detailed Description
High Voltage NPN Bipolar Transistor, SOT-23 (TO-236) 3 LEAD, 3000-REEL
Package
TO-236-3, SC-59, SOT-23-3
Lifecycle Status
Active
Datasheet
PDF SMMBTA42LT1G Datasheet
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Ordering Code Family

SMMBTA42LT groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

2 ordering variants listed on the family page.

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Technical Specifications

onsemi SMMBTA42LT1G BJTs technical specifications.

General

Package / Case
TO-236-3, SC-59, SOT-23-3
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Power Max
225 mW
Frequency Transition
50MHz
Grade
Automotive
Transistor Type
NPN
Qualification
AEC-Q101
Current Collector IC Max
500 mA

Alternate Parts Comparison (SMMBTA42LT1G vs SMMBTA42LT3G vs SMMBFJ175LT1G vs MUN2233T1G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Lifecycle StatusActiveActiveActiveActive
DescriptionTRANS NPN 300V 0.5A SOT23-3TRANS NPN 300V 0.5A SOT23-3JFET P-CH 30V SOT23-3TRANS PREBIAS NPN 50V 0.1A SC59
Detailed DescriptionBipolar (BJT) Transistor NPN 300 V 500 mA 50MHz 225 mW Surface Mount SOT-23-3 (TO-236)Bipolar (BJT) Transistor NPN 300 V 500 mA 50MHz 225 mW Surface Mount SOT-23-3 (TO-236)JFET P-Channel 30 V 225 mW Surface Mount SOT-23-3 (TO-236)Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 230 mW Surface Mount SC-59
Power Max225 mW225 mW225 mW230 mW
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)--
Current Collector Cutoff Max100nA (ICBO)100nA (ICBO)--500nA
Current Collector IC Max500 mA500 mA--100 mA
Dc Current Gain Hfe Min IC Vce40 @ 30mA, 10V40 @ 30mA, 10V--80 @ 5mA, 10V
Transistor TypeNPNNPN--NPN - Pre-Biased
Vce Saturation Max Ib IC500mV @ 2mA, 20mA500mV @ 2mA, 20mA--250mV @ 300µA, 10mA
Action

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