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onsemi NSVBC857BLT3G BJTs

PNP Bipolar Transistor, 10000-REEL

720,000 ActiveonsemiTO-236-3, SC-59, SOT-23-3$0.08
NSVBC857BLT3G - No Image Available

Same model may have multiple batches, images only for reference.

NSVBC857BLT3G
Manufacturer
Part Number (MPN)
NSVBC857BLT3G
Detailed Description
PNP Bipolar Transistor, 10000-REEL
Package
TO-236-3, SC-59, SOT-23-3
Lifecycle Status
Active
Datasheet
PDF NSVBC857BLT3G Datasheet
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Technical Specifications

onsemi NSVBC857BLT3G BJTs technical specifications.

General

Package / Case
TO-236-3, SC-59, SOT-23-3
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
220 @ 2mA, 5V
Power Max
225 mW
Frequency Transition
100MHz
Transistor Type
PNP
Current Collector IC Max
100 mA
Voltage Collector Emitter Breakdown Max
45 V

Alternate Parts Comparison (NSVBC857BLT3G vs SMMBFJ175LT1G vs MMBFJ175LT1G vs NSVMMUN2112LT1G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Lifecycle StatusActiveActiveActiveActive
DescriptionTRANS PNP 45V 0.1A SOT23-3JFET P-CH 30V SOT23-3JFET P-CH 30V SOT23-3TRANS PREBIAS PNP 50V SOT23-3
Detailed DescriptionBipolar (BJT) Transistor PNP 45 V 100 mA 100MHz 225 mW Surface Mount SOT-23-3 (TO-236)JFET P-Channel 30 V 225 mW Surface Mount SOT-23-3 (TO-236)JFET P-Channel 30 V 225 mW Surface Mount SOT-23-3 (TO-236)Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 246 mW Surface Mount SOT-23-3 (TO-236)
Power Max225 mW225 mW225 mW246 mW
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)--
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