onsemi PN2222ABU BJTs
Bipolar Transistors - BJT NPN Transistor General Purpose
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
PN2222ABU
Detailed Description
Bipolar Transistors - BJT NPN Transistor General Purpose
Package
TO-226-3, TO-92-3 (TO-226AA)
Lifecycle Status
Active
Datasheet
PN2222ABU Datasheet
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Technical Specifications
onsemi PN2222ABU BJTs technical specifications.
General
RoHS
Yes
Package / Case
TO-226-3, TO-92-3
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
100 @ 150mA, 10V
Power Max
625 mW
Frequency Transition
300MHz
Transistor Type
NPN
Current Collector IC Max
1 A
Alternate Parts Comparison (PN2222ABU vs PN2907BU vs PN2907ABU vs BC547B)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-226-3, TO-92-3 | TO-226-3, TO-92-3 | TO-226-3, TO-92-3 | TO-226-3, TO-92-3 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | 150°C (TJ) |
| Lifecycle Status | Active | Obsolete | Active | Obsolete |
| Current Collector Cutoff Max | 10nA (ICBO) | 20nA (ICBO) | 20nA (ICBO) | 15nA (ICBO) |
| Current Collector IC Max | 1 A | 800 mA | 800 mA | 100 mA |
| Dc Current Gain Hfe Min IC Vce | 100 @ 150mA, 10V | 100 @ 150mA, 10V | 100 @ 150mA, 10V | 200 @ 2mA, 5V |
| Power Max | 625 mW | 625 mW | 625 mW | 500 mW |
| Transistor Type | NPN | PNP | PNP | NPN |
| Vce Saturation Max Ib IC | 1V @ 50mA, 500mA | 1.6V @ 50mA, 500mA | 1.6V @ 50mA, 500mA | 600mV @ 5mA, 100mA |
| Voltage Collector Emitter Breakdown Max | 40 V | 40 V | 60 V | 45 V |
| RoHS | Yes | Yes | -- | Yes |
| Action |
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