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onsemi NSVT30010MXV6T1G BJTs

Bipolar Transistor, Dual, PNP, SOT-563, 6 LEAD, 4000-REEL

3,690 ActiveonsemiSOT-563, SOT-666$0.27
NSVT30010MXV6T1G SOT-563, SOT-666 package illustration

Same model may have multiple batches, images only for reference.

NSVT30010MXV6T1G
Manufacturer
Part Number (MPN)
NSVT30010MXV6T1G
Detailed Description
Bipolar Transistor, Dual, PNP, SOT-563, 6 LEAD, 4000-REEL
Package
SOT-563, SOT-666
Lifecycle Status
Active
Datasheet
PDF NSVT30010MXV6T1G Datasheet
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Technical Specifications

onsemi NSVT30010MXV6T1G BJTs technical specifications.

General

RoHS
Yes
Package / Case
SOT-563, SOT-666
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
420 @ 2mA, 5V
Power Max
500mW
Frequency Transition
100MHz
Transistor Type
2 PNP (Dual)
Current Collector IC Max
100mA

Related Parts Comparison (NSVT30010MXV6T1G vs NSVT3946DXV6T1G vs NSVBC114EDXV6T1G vs NSVBC114EPDXV6T1G)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Package / CaseSOT-563, SOT-666SOT-563, SOT-666SOT-563, SOT-666SOT-563, SOT-666
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Lifecycle StatusActiveActiveActiveActive
Current Collector IC Max100mA200mA100mA100mA
Dc Current Gain Hfe Min IC Vce420 @ 2mA, 5V100 @ 10mA, 1V35 @ 5mA, 10V35 @ 5mA, 10V
Power Max500mW500mW500mW500mW
Transistor Type2 PNP (Dual)1 NPN, 1 PNP2 NPN - Pre-Biased (Dual)1 NPN, 1 PNP - Pre-Biased (Dual)
Vce Saturation Max Ib IC600mV @ 5mA, 100mA300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA250mV @ 300µA, 10mA250mV @ 300µA, 10mA
Voltage Collector Emitter Breakdown Max30V40V50V50V
RoHSYesYes--Yes
Current Collector Cutoff Max15nA (ICBO)--500nA500nA
PackageSOT-563SOT-563--SOT-563
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