onsemi NSVT30010MXV6T1G BJTs
Bipolar Transistor, Dual, PNP, SOT-563, 6 LEAD, 4000-REEL
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NSVT30010MXV6T1G
Detailed Description
Bipolar Transistor, Dual, PNP, SOT-563, 6 LEAD, 4000-REEL
Package
SOT-563, SOT-666
Lifecycle Status
Active
Datasheet
NSVT30010MXV6T1G Datasheet
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Technical Specifications
onsemi NSVT30010MXV6T1G BJTs technical specifications.
General
RoHS
Yes
Package / Case
SOT-563, SOT-666
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
420 @ 2mA, 5V
Power Max
500mW
Frequency Transition
100MHz
Transistor Type
2 PNP (Dual)
Current Collector IC Max
100mA
Alternate Parts Comparison (NSVT30010MXV6T1G vs NSVT3946DXV6T1G vs NSVBC114EDXV6T1G vs NSVBC114EPDXV6T1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | SOT-563, SOT-666 | SOT-563, SOT-666 | SOT-563, SOT-666 | SOT-563, SOT-666 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Lifecycle Status | Active | Active | Active | Active |
| Current Collector IC Max | 100mA | 200mA | 100mA | 100mA |
| Dc Current Gain Hfe Min IC Vce | 420 @ 2mA, 5V | 100 @ 10mA, 1V | 35 @ 5mA, 10V | 35 @ 5mA, 10V |
| Description | -- | -- | -- | -- |
| Detailed Description | -- | -- | -- | -- |
| Power Max | 500mW | 500mW | 500mW | 500mW |
| Transistor Type | 2 PNP (Dual) | 1 NPN, 1 PNP | 2 NPN - Pre-Biased (Dual) | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Vce Saturation Max Ib IC | 600mV @ 5mA, 100mA | 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA | 250mV @ 300µA, 10mA | 250mV @ 300µA, 10mA |
| Voltage Collector Emitter Breakdown Max | 30V | 40V | 50V | 50V |
| Current Collector Cutoff Max | 15nA (ICBO) | -- | 500nA | 500nA |
| Action |
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