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onsemi NSVBC123JPDXV6T1G BJTs

Complementary Bipolar Digital Transistor (BRT), 4000-REEL

432,000 ActiveonsemiSOT-563, SOT-666$0.12
NSVBC123JPDXV6T1G SOT-563, SOT-666 package illustration

Same model may have multiple batches, images only for reference.

NSVBC123JPDXV6T1G
Manufacturer
Part Number (MPN)
NSVBC123JPDXV6T1G
Detailed Description
Complementary Bipolar Digital Transistor (BRT), 4000-REEL
Package
SOT-563, SOT-666
Lifecycle Status
Active
Datasheet
PDF NSVBC123JPDXV6T1G Datasheet
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Technical Specifications

onsemi NSVBC123JPDXV6T1G BJTs technical specifications.

General

RoHS
Yes
Package / Case
SOT-563, SOT-666
Mounting Type
Surface Mount
Lifecycle Status
Active
Vce Saturation Max Ib IC
250mV @ 300µA, 10mA
Current Collector Cutoff Max
500nA
Power Max
500mW
Grade
Automotive
Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
Qualification
AEC-Q101

Alternate Parts Comparison (NSVBC123JPDXV6T1G vs NSVBC114EDXV6T1G vs NSVBC114EPDXV6T1G vs NSVBC124EPDXV6T1G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseSOT-563, SOT-666SOT-563, SOT-666SOT-563, SOT-666SOT-563, SOT-666
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Lifecycle StatusActiveActiveActiveActive
Current Collector Cutoff Max500nA500nA500nA500nA
Current Collector IC Max100mA100mA100mA100mA
Dc Current Gain Hfe Min IC Vce80 @ 5mA, 10V35 @ 5mA, 10V35 @ 5mA, 10V60 @ 5mA, 10V
Description--------
Detailed Description--------
GradeAutomotiveAutomotiveAutomotiveAutomotive
Power Max500mW500mW500mW339mW
QualificationAEC-Q101AEC-Q101AEC-Q101AEC-Q101
Resistor Base R12.2kOhms10kOhms10kOhms22kOhms
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