onsemi NSVBC123JPDXV6T1G BJTs
Complementary Bipolar Digital Transistor (BRT), 4000-REEL
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NSVBC123JPDXV6T1G
Detailed Description
Complementary Bipolar Digital Transistor (BRT), 4000-REEL
Package
SOT-563, SOT-666
Lifecycle Status
Active
Datasheet
NSVBC123JPDXV6T1G Datasheet
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Technical Specifications
onsemi NSVBC123JPDXV6T1G BJTs technical specifications.
General
RoHS
Yes
Package / Case
SOT-563, SOT-666
Mounting Type
Surface Mount
Lifecycle Status
Active
Vce Saturation Max Ib IC
250mV @ 300µA, 10mA
Current Collector Cutoff Max
500nA
Power Max
500mW
Grade
Automotive
Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
Qualification
AEC-Q101
Alternate Parts Comparison (NSVBC123JPDXV6T1G vs NSVBC114EDXV6T1G vs NSVBC114EPDXV6T1G vs NSVBC124EPDXV6T1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | SOT-563, SOT-666 | SOT-563, SOT-666 | SOT-563, SOT-666 | SOT-563, SOT-666 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Lifecycle Status | Active | Active | Active | Active |
| Current Collector Cutoff Max | 500nA | 500nA | 500nA | 500nA |
| Current Collector IC Max | 100mA | 100mA | 100mA | 100mA |
| Dc Current Gain Hfe Min IC Vce | 80 @ 5mA, 10V | 35 @ 5mA, 10V | 35 @ 5mA, 10V | 60 @ 5mA, 10V |
| Description | -- | -- | -- | -- |
| Detailed Description | -- | -- | -- | -- |
| Grade | Automotive | Automotive | Automotive | Automotive |
| Power Max | 500mW | 500mW | 500mW | 339mW |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Resistor Base R1 | 2.2kOhms | 10kOhms | 10kOhms | 22kOhms |
| Action |
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