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onsemi NSS12100XV6T1G BJTs

PNP BJT, 12V, 1A, 100MHz, SOT-563, SM

3,385 ActiveonsemiSOT-563, SOT-666$0.71
NSS12100XV6T1G SOT-563, SOT-666 package illustration

Same model may have multiple batches, images only for reference.

NSS12100XV6T1G
Manufacturer
Part Number (MPN)
NSS12100XV6T1G
Detailed Description
PNP BJT, 12V, 1A, 100MHz, SOT-563, SM
Package
SOT-563, SOT-666
Lifecycle Status
Active
Datasheet
PDF NSS12100XV6T1G Datasheet
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Technical Specifications

onsemi NSS12100XV6T1G BJTs technical specifications.

General

Package / Case
SOT-563, SOT-666
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Current Collector Cutoff Max
100nA (ICBO)
Dc Current Gain Hfe Min IC Vce
100 @ 500mA, 2V
Power Max
500 mW
Transistor Type
PNP
Current Collector IC Max
1 A
Voltage Collector Emitter Breakdown Max
12 V

Related Parts Comparison (NSS12100XV6T1G vs NSVBC114EDXV6T1G vs NSVBC114EPDXV6T1G vs NSVBC123JPDXV6T1G)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Package / CaseSOT-563, SOT-666SOT-563, SOT-666SOT-563, SOT-666SOT-563, SOT-666
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Lifecycle StatusActiveActiveActiveActive
Current Collector Cutoff Max100nA (ICBO)500nA500nA500nA
Current Collector IC Max1 A100mA100mA100mA
Dc Current Gain Hfe Min IC Vce100 @ 500mA, 2V35 @ 5mA, 10V35 @ 5mA, 10V80 @ 5mA, 10V
Power Max500 mW500mW500mW500mW
Transistor TypePNP2 NPN - Pre-Biased (Dual)1 NPN, 1 PNP - Pre-Biased (Dual)1 NPN, 1 PNP - Pre-Biased (Dual)
Vce Saturation Max Ib IC440mV @ 100mA, 1A250mV @ 300µA, 10mA250mV @ 300µA, 10mA250mV @ 300µA, 10mA
Voltage Collector Emitter Breakdown Max12 V50V50V50V
Grade--AutomotiveAutomotiveAutomotive
Qualification--AEC-Q101AEC-Q101AEC-Q101
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