onsemi NSS12100XV6T1G BJTs
PNP BJT, 12V, 1A, 100MHz, SOT-563, SM
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NSS12100XV6T1G
Detailed Description
PNP BJT, 12V, 1A, 100MHz, SOT-563, SM
Package
SOT-563, SOT-666
Lifecycle Status
Active
Datasheet
NSS12100XV6T1G Datasheet
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Technical Specifications
onsemi NSS12100XV6T1G BJTs technical specifications.
General
Package / Case
SOT-563, SOT-666
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Current Collector Cutoff Max
100nA (ICBO)
Dc Current Gain Hfe Min IC Vce
100 @ 500mA, 2V
Power Max
500 mW
Transistor Type
PNP
Current Collector IC Max
1 A
Voltage Collector Emitter Breakdown Max
12 V
Alternate Parts Comparison (NSS12100XV6T1G vs NSVBC114EDXV6T1G vs NSVBC114EPDXV6T1G vs NSVBC123JPDXV6T1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | SOT-563, SOT-666 | SOT-563, SOT-666 | SOT-563, SOT-666 | SOT-563, SOT-666 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Lifecycle Status | Active | Active | Active | Active |
| Current Collector Cutoff Max | 100nA (ICBO) | 500nA | 500nA | 500nA |
| Current Collector IC Max | 1 A | 100mA | 100mA | 100mA |
| Dc Current Gain Hfe Min IC Vce | 100 @ 500mA, 2V | 35 @ 5mA, 10V | 35 @ 5mA, 10V | 80 @ 5mA, 10V |
| Description | -- | -- | -- | -- |
| Detailed Description | -- | -- | -- | -- |
| Power Max | 500 mW | 500mW | 500mW | 500mW |
| Transistor Type | PNP | 2 NPN - Pre-Biased (Dual) | 1 NPN, 1 PNP - Pre-Biased (Dual) | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Vce Saturation Max Ib IC | 440mV @ 100mA, 1A | 250mV @ 300µA, 10mA | 250mV @ 300µA, 10mA | 250mV @ 300µA, 10mA |
| Voltage Collector Emitter Breakdown Max | 12 V | 50V | 50V | 50V |
| Action |
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