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onsemi NSS12100XV6T1G BJTs

PNP BJT, 12V, 1A, 100MHz, SOT-563, SM

3,385 ActiveonsemiSOT-563, SOT-666$0.71
NSS12100XV6T1G SOT-563, SOT-666 package illustration

Same model may have multiple batches, images only for reference.

NSS12100XV6T1G
Manufacturer
Part Number (MPN)
NSS12100XV6T1G
Detailed Description
PNP BJT, 12V, 1A, 100MHz, SOT-563, SM
Package
SOT-563, SOT-666
Lifecycle Status
Active
Datasheet
PDF NSS12100XV6T1G Datasheet
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Technical Specifications

onsemi NSS12100XV6T1G BJTs technical specifications.

General

Package / Case
SOT-563, SOT-666
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Current Collector Cutoff Max
100nA (ICBO)
Dc Current Gain Hfe Min IC Vce
100 @ 500mA, 2V
Power Max
500 mW
Transistor Type
PNP
Current Collector IC Max
1 A
Voltage Collector Emitter Breakdown Max
12 V

Alternate Parts Comparison (NSS12100XV6T1G vs NSVBC114EDXV6T1G vs NSVBC114EPDXV6T1G vs NSVBC123JPDXV6T1G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseSOT-563, SOT-666SOT-563, SOT-666SOT-563, SOT-666SOT-563, SOT-666
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Lifecycle StatusActiveActiveActiveActive
Current Collector Cutoff Max100nA (ICBO)500nA500nA500nA
Current Collector IC Max1 A100mA100mA100mA
Dc Current Gain Hfe Min IC Vce100 @ 500mA, 2V35 @ 5mA, 10V35 @ 5mA, 10V80 @ 5mA, 10V
Description--------
Detailed Description--------
Power Max500 mW500mW500mW500mW
Transistor TypePNP2 NPN - Pre-Biased (Dual)1 NPN, 1 PNP - Pre-Biased (Dual)1 NPN, 1 PNP - Pre-Biased (Dual)
Vce Saturation Max Ib IC440mV @ 100mA, 1A250mV @ 300µA, 10mA250mV @ 300µA, 10mA250mV @ 300µA, 10mA
Voltage Collector Emitter Breakdown Max12 V50V50V50V
Action

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