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onsemi NSVBC144EPDXV6T1G BJTs

Complementary Bipolar Digital Transistor (BRT), 4000-REEL

432,000 ActiveonsemiSOT-563, SOT-666$0.12
NSVBC144EPDXV6T1G SOT-563, SOT-666 package illustration

Same model may have multiple batches, images only for reference.

NSVBC144EPDXV6T1G
Manufacturer
Part Number (MPN)
NSVBC144EPDXV6T1G
Detailed Description
Complementary Bipolar Digital Transistor (BRT), 4000-REEL
Package
SOT-563, SOT-666
Lifecycle Status
Active
Datasheet
PDF NSVBC144EPDXV6T1G Datasheet
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Technical Specifications

onsemi NSVBC144EPDXV6T1G BJTs technical specifications.

General

RoHS
Yes
Package / Case
SOT-563, SOT-666
Mounting Type
Surface Mount
Lifecycle Status
Active
Vce Saturation Max Ib IC
250mV @ 300µA, 10mA
Current Collector Cutoff Max
500nA
Power Max
500mW
Grade
Automotive
Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
Qualification
AEC-Q101

Related Parts Comparison (NSVBC144EPDXV6T1G vs NSVBC114EDXV6T1G vs NSVBC114EPDXV6T1G vs NSVBC123JPDXV6T1G)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Package / CaseSOT-563, SOT-666SOT-563, SOT-666SOT-563, SOT-666SOT-563, SOT-666
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Lifecycle StatusActiveActiveActiveActive
Current Collector Cutoff Max500nA500nA500nA500nA
Current Collector IC Max100mA100mA100mA100mA
Dc Current Gain Hfe Min IC Vce80 @ 5mA, 10V35 @ 5mA, 10V35 @ 5mA, 10V80 @ 5mA, 10V
GradeAutomotiveAutomotiveAutomotiveAutomotive
Power Max500mW500mW500mW500mW
QualificationAEC-Q101AEC-Q101AEC-Q101AEC-Q101
Resistor Base R147kOhms10kOhms10kOhms2.2kOhms
Resistor Emitter Base R247kOhms10kOhms10kOhms47kOhms
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)2 NPN - Pre-Biased (Dual)1 NPN, 1 PNP - Pre-Biased (Dual)1 NPN, 1 PNP - Pre-Biased (Dual)
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