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onsemi NSBA143TDXV6T1G BJTs

Dual PNP Bipolar Digital Transistor (BRT), SOT-563, 6 LEAD, 4000-REEL

4,000 ActiveonsemiSOT-563, SOT-666$0.11
NSBA143TDXV6T1G SOT-563, SOT-666 package illustration

Same model may have multiple batches, images only for reference.

NSBA143TDXV6T1G
Manufacturer
Part Number (MPN)
NSBA143TDXV6T1G
Detailed Description
Dual PNP Bipolar Digital Transistor (BRT), SOT-563, 6 LEAD, 4000-REEL
Package
SOT-563, SOT-666
Lifecycle Status
Active
Datasheet
PDF NSBA143TDXV6T1G Datasheet
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Technical Specifications

onsemi NSBA143TDXV6T1G BJTs technical specifications.

General

Series
NSBA143TDXV6
RoHS
Yes
Package / Case
SOT-563, SOT-666
Mounting Type
Surface Mount
Operating Temperature
- 55°C ~ + 150°C
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
160 @ 5mA, 10V
Vce Saturation Max Ib IC
250mV @ 1mA, 10mA
Current Collector Cutoff Max
500nA
Power Max
500mW

Alternate Parts Comparison (NSBA143TDXV6T1G vs NSBA114TDXV6T1G vs NSVT3946DXV6T1G vs SBC847BPDXV6T1G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseSOT-563, SOT-666SOT-563, SOT-666SOT-563, SOT-666SOT-563, SOT-666
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Lifecycle StatusActiveActiveActiveActive
Current Collector IC Max100mA100mA200mA100mA
Dc Current Gain Hfe Min IC Vce160 @ 5mA, 10V160 @ 5mA, 10V100 @ 10mA, 1V200 @ 2mA, 5V
Description--------
Detailed Description--------
Power Max500mW500mW500mW357mW
Transistor Type2 PNP - Pre-Biased (Dual)2 PNP - Pre-Biased (Dual)1 NPN, 1 PNP1 NPN, 1 PNP
Vce Saturation Max Ib IC250mV @ 1mA, 10mA250mV @ 1mA, 10mA300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA600mV @ 5mA, 100mA / 650mV @ 5mA, 100mA
Voltage Collector Emitter Breakdown Max50V50V40V45V
Current Collector Cutoff Max500nA500nA--15nA (ICBO)
Action

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