onsemi NSBA114TDXV6T1G BJTs
100mA, 50V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6 PIN
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NSBA114TDXV6T1G
Detailed Description
100mA, 50V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6 PIN
Package
SOT-563, SOT-666
Lifecycle Status
Active
Datasheet
NSBA114TDXV6T1G Datasheet
Quick Jump:
Technical Specifications
onsemi NSBA114TDXV6T1G BJTs technical specifications.
General
Series
NSBA114TDXV6
RoHS
Yes
Package / Case
SOT-563, SOT-666
Mounting Type
Surface Mount
Operating Temperature
- 55°C ~ + 150°C
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
160 @ 5mA, 10V
Vce Saturation Max Ib IC
250mV @ 1mA, 10mA
Current Collector Cutoff Max
500nA
Power Max
500mW
Alternate Parts Comparison (NSBA114TDXV6T1G vs NSBA143TDXV6T1G vs NSVT3946DXV6T1G vs SBC847BPDXV6T1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | SOT-563, SOT-666 | SOT-563, SOT-666 | SOT-563, SOT-666 | SOT-563, SOT-666 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Lifecycle Status | Active | Active | Active | Active |
| Current Collector IC Max | 100mA | 100mA | 200mA | 100mA |
| Dc Current Gain Hfe Min IC Vce | 160 @ 5mA, 10V | 160 @ 5mA, 10V | 100 @ 10mA, 1V | 200 @ 2mA, 5V |
| Description | -- | -- | -- | -- |
| Detailed Description | -- | -- | -- | -- |
| Power Max | 500mW | 500mW | 500mW | 357mW |
| Transistor Type | 2 PNP - Pre-Biased (Dual) | 2 PNP - Pre-Biased (Dual) | 1 NPN, 1 PNP | 1 NPN, 1 PNP |
| Vce Saturation Max Ib IC | 250mV @ 1mA, 10mA | 250mV @ 1mA, 10mA | 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA | 600mV @ 5mA, 100mA / 650mV @ 5mA, 100mA |
| Voltage Collector Emitter Breakdown Max | 50V | 50V | 40V | 45V |
| Current Collector Cutoff Max | 500nA | 500nA | -- | 15nA (ICBO) |
| Action |
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