onsemi NGTB75N65FL2WG BJTs
Trans IGBT Chip N-CH 650V 100A 595000mW 3-Pin(3+Tab) TO-247 Tube
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NGTB75N65FL2WG
Detailed Description
Trans IGBT Chip N-CH 650V 100A 595000mW 3-Pin(3+Tab) TO-247 Tube
Package
TO-247-3
Lifecycle Status
Active
Datasheet
NGTB75N65FL2WG Datasheet
Quick Jump:
Technical Specifications
onsemi NGTB75N65FL2WG BJTs technical specifications.
General
Package / Case
TO-247-3
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Input Type
Standard
Gate Charge
310 nC
Td on Off 25 C
110ns/270ns
Test Condition
400V, 75A, 10Ohm, 15V
Igbt Type
Trench Field Stop
Reverse Recovery Time Trr
80 ns
Alternate Parts Comparison (NGTB75N65FL2WG vs NGTB20N135IHRWG vs NGTB25N120FL3WG vs MJH11020G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) | -40°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -65°C ~ 150°C (TJ) |
| Lifecycle Status | Active | Obsolete | Active | Active |
| Current Collector IC Max | 100 A | 40 A | 100 A | 15 A |
| Description | -- | -- | -- | -- |
| Detailed Description | -- | -- | -- | -- |
| Power Max | 595 W | 394 W | 349 W | 150 W |
| Voltage Collector Emitter Breakdown Max | 650 V | 1350 V | 1200 V | 200 V |
| Current Collector Pulsed Icm | 200 A | 120 A | 100 A | -- |
| Gate Charge | 310 nC | 234 nC | 136 nC | -- |
| Igbt Type | Trench Field Stop | Trench Field Stop | Trench Field Stop | -- |
| Action |
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