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onsemi MJH11020G BJTs

NPN Darlington Transistor 200V 15A TO-247

29,000 ActiveonsemiTO-247-3$10.27
MJH11020G - No Image Available

Same model may have multiple batches, images only for reference.

MJH11020G
Manufacturer
Part Number (MPN)
MJH11020G
Detailed Description
NPN Darlington Transistor 200V 15A TO-247
Package
TO-247-3
Lifecycle Status
Active
Datasheet
PDF MJH11020G Datasheet
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Technical Specifications

onsemi MJH11020G BJTs technical specifications.

General

Package / Case
TO-247-3
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
400 @ 10A, 5V
Power Max
150 W
Frequency Transition
3MHz
Transistor Type
NPN - Darlington
Current Collector IC Max
15 A
Voltage Collector Emitter Breakdown Max
200 V

Alternate Parts Comparison (MJH11020G vs AFGHL75T65SQDT vs AFGY100T65SPD vs FGHL75T65MQDT)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-247-3TO-247-3TO-247-3TO-247-3
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Operating Temperature-65°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
Lifecycle StatusActiveActiveActiveActive
Current Collector IC Max15 A80 A120 A80 A
DescriptionTRANS NPN DARL 200V 15A TO-247-3IGBT TRENCH FS 650V 80A TO-247-3IGBT TRENCH FS 650V 120A TO-247IGBT TRENCH FS 650V 80A TO-247-3
Detailed DescriptionBipolar (BJT) Transistor NPN - Darlington 200 V 15 A 3MHz 150 W Through Hole TO-247-3IGBT Trench Field Stop 650 V 80 A 375 W Through Hole TO-247-3IGBT Trench Field Stop 650 V 120 A 660 W Through Hole TO-247-3IGBT Trench Field Stop 650 V 80 A 375 W Through Hole TO-247-3
Power Max150 W375 W660 W375 W
Voltage Collector Emitter Breakdown Max200 V650 V650 V650 V
Current Collector Pulsed Icm--300 A300 A300 A
Gate Charge--136 nC109 nC149 nC
Igbt Type--Trench Field StopTrench Field StopTrench Field Stop
Action

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