onsemi FGHL75T65LQDT BJTs
FS4 LOW VCESAT IGBT 650V 75A TO2
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
FGHL75T65LQDT
Base Model
Detailed Description
FS4 LOW VCESAT IGBT 650V 75A TO2
Package
TO-247-3
Lifecycle Status
Active
Datasheet
FGHL75T65LQDT Datasheet
Quick Jump:
Technical Specifications
onsemi FGHL75T65LQDT BJTs technical specifications.
General
Package / Case
TO-247-3
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Switching Energy
1.88mJ (on), 2.38mJ (off)
Input Type
Standard
Gate Charge
793 nC
Td on Off 25 C
48ns/568ns
Igbt Type
Trench Field Stop
Test Condition
400V, 75A, 4.7Ohm, 15V
Alternate Parts Comparison (FGHL75T65LQDT vs FGHL75T65MQDT vs MJH11020G vs MJW18020G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) |
| Lifecycle Status | Active | Active | Active | Active |
| Current Collector IC Max | 80 A | 80 A | 15 A | 30 A |
| Description | IGBT TRENCH FS 650V 80A TO-247-3 | IGBT TRENCH FS 650V 80A TO-247-3 | TRANS NPN DARL 200V 15A TO-247-3 | TRANS NPN 450V 30A TO-247-3 |
| Detailed Description | IGBT Trench Field Stop 650 V 80 A 469 W Through Hole TO-247-3 | IGBT Trench Field Stop 650 V 80 A 375 W Through Hole TO-247-3 | Bipolar (BJT) Transistor NPN - Darlington 200 V 15 A 3MHz 150 W Through Hole TO-247-3 | Bipolar (BJT) Transistor NPN 450 V 30 A 13MHz 250 W Through Hole TO-247-3 |
| Power Max | 469 W | 375 W | 150 W | 250 W |
| Voltage Collector Emitter Breakdown Max | 650 V | 650 V | 200 V | 450 V |
| Action |
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