STMicroelectronics STGW80H65DFB BJTs
Trench gate field-stop 650 V, 80 A high speed HB series IGBT
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
STGW80H65DFB
Base Model
Detailed Description
Trench gate field-stop 650 V, 80 A high speed HB series IGBT
Package
TO-247-3
Lifecycle Status
Active
Datasheet
STGW80H65DFB Datasheet
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Technical Specifications
STMicroelectronics STGW80H65DFB BJTs technical specifications.
General
Package / Case
TO-247-3
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Input Type
Standard
Gate Charge
414 nC
Td on Off 25 C
84ns/280ns
Test Condition
400V, 80A, 10Ohm, 15V
Igbt Type
Trench Field Stop
Reverse Recovery Time Trr
85 ns
Alternate Parts Comparison (STGW80H65DFB vs STGW80H65DFB-4 vs STGW20NC60V vs STGW19NC60HD)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-247-3 | Tube | TO-247-3 | TO-247-3 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Lifecycle Status | Active | Active | Active | Active |
| Current Collector IC Max | 120 A | 120 A | 60 A | 42 A |
| Current Collector Pulsed Icm | 240 A | 240 A | 100 A | 60 A |
| Description | -- | -- | -- | -- |
| Detailed Description | -- | -- | -- | -- |
| Gate Charge | 414 nC | 414 nC | 100 nC | 53 nC |
| Input Type | Standard | Standard | Standard | Standard |
| Power Max | 469 W | 469 W | 200 W | 140 W |
| Switching Energy | 2.1mJ (on), 1.5mJ (off) | 2.1mJ (on), 1.5mJ (off) | 220µJ (on), 330µJ (off) | 85µJ (on), 189µJ (off) |
| Action |
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