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onsemi MJE4343G BJTs

16A 160V NPN BJT Power Transistor TO-247

4,700onsemiTO-247-3$16.16
MJE4343G - No Image Available

Same model may have multiple batches, images only for reference.

MJE4343G
Manufacturer
Part Number (MPN)
MJE4343G
Detailed Description
16A 160V NPN BJT Power Transistor TO-247
Package
TO-247-3
Lifecycle Status
Obsolete
Datasheet
PDF MJE4343G Datasheet
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Technical Specifications

onsemi MJE4343G BJTs technical specifications.

General

Package / Case
TO-247-3
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 150°C (TJ)
Lifecycle Status
Obsolete
Dc Current Gain Hfe Min IC Vce
15 @ 8A, 2V
Power Max
125 W
Frequency Transition
1MHz
Transistor Type
NPN
Current Collector IC Max
16 A
Voltage Collector Emitter Breakdown Max
160 V

Alternate Parts Comparison (MJE4343G vs AFGHL75T65SQDT vs AFGY100T65SPD vs FGHL75T65MQDT)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-247-3TO-247-3TO-247-3TO-247-3
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Operating Temperature-65°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
Lifecycle StatusObsoleteActiveActiveActive
Current Collector IC Max16 A80 A120 A80 A
DescriptionTRANS NPN 160V 16A TO-247-3IGBT TRENCH FS 650V 80A TO-247-3IGBT TRENCH FS 650V 120A TO-247IGBT TRENCH FS 650V 80A TO-247-3
Detailed DescriptionBipolar (BJT) Transistor NPN 160 V 16 A 1MHz 125 W Through Hole TO-247-3IGBT Trench Field Stop 650 V 80 A 375 W Through Hole TO-247-3IGBT Trench Field Stop 650 V 120 A 660 W Through Hole TO-247-3IGBT Trench Field Stop 650 V 80 A 375 W Through Hole TO-247-3
Power Max125 W375 W660 W375 W
Voltage Collector Emitter Breakdown Max160 V650 V650 V650 V
Current Collector Pulsed Icm--300 A300 A300 A
Gate Charge--136 nC109 nC149 nC
Igbt Type--Trench Field StopTrench Field StopTrench Field Stop
Action

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