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onsemi NGTB20N135IHRWG BJTs

IGBT, 1350V 20A FS2-RC Induction Heating, TO-247, 30-TUBE

1,800onsemiTO-247-3$9.23
NGTB20N135IHRWG - No Image Available

Same model may have multiple batches, images only for reference.

NGTB20N135IHRWG
Manufacturer
Part Number (MPN)
NGTB20N135IHRWG
Detailed Description
IGBT, 1350V 20A FS2-RC Induction Heating, TO-247, 30-TUBE
Package
TO-247-3
Lifecycle Status
Obsolete
Datasheet
PDF NGTB20N135IHRWG Datasheet
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Technical Specifications

onsemi NGTB20N135IHRWG BJTs technical specifications.

General

Package / Case
TO-247-3
Mounting Type
Through Hole
Operating Temperature
-40°C ~ 175°C (TJ)
Lifecycle Status
Obsolete
Switching Energy
600µJ (off)
Input Type
Standard
Gate Charge
234 nC
Td on Off 25 C
-/245ns
Igbt Type
Trench Field Stop
Test Condition
600V, 20A, 10Ohm, 15V

Alternate Parts Comparison (NGTB20N135IHRWG vs MJH11020G vs MJW18020G vs MJE4343G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-247-3TO-247-3TO-247-3TO-247-3
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Operating Temperature-40°C ~ 175°C (TJ)-65°C ~ 150°C (TJ)-65°C ~ 150°C (TJ)-65°C ~ 150°C (TJ)
Lifecycle StatusObsoleteActiveActiveObsolete
Current Collector IC Max40 A15 A30 A16 A
DescriptionIGBT TRENCH FS 1350V 40A TO-247TRANS NPN DARL 200V 15A TO-247-3TRANS NPN 450V 30A TO-247-3TRANS NPN 160V 16A TO-247-3
Detailed DescriptionIGBT Trench Field Stop 1350 V 40 A 394 W Through Hole TO-247Bipolar (BJT) Transistor NPN - Darlington 200 V 15 A 3MHz 150 W Through Hole TO-247-3Bipolar (BJT) Transistor NPN 450 V 30 A 13MHz 250 W Through Hole TO-247-3Bipolar (BJT) Transistor NPN 160 V 16 A 1MHz 125 W Through Hole TO-247-3
Power Max394 W150 W250 W125 W
Voltage Collector Emitter Breakdown Max1350 V200 V450 V160 V
Current Collector Cutoff Max--1mA100µA750µA
Dc Current Gain Hfe Min IC Vce--400 @ 10A, 5V14 @ 3A, 5V15 @ 8A, 2V
Frequency Transition--3MHz13MHz1MHz
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