onsemi CPH6122-TL-E RF BJT
CPH6122-TL-E Bipolar Transistor, -30V, -3A, Low VCE(sat), PNP Single CPH6
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
CPH6122-TL-E
Detailed Description
CPH6122-TL-E Bipolar Transistor, -30V, -3A, Low VCE(sat), PNP Single CPH6
Package
SOT-23-6 Thin, TSOT-23-6
Lifecycle Status
Obsolete
Datasheet
CPH6122-TL-E Datasheet
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Technical Specifications
onsemi CPH6122-TL-E RF BJT technical specifications.
General
Package / Case
SOT-23-6 Thin, TSOT-23-6
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Lifecycle Status
Obsolete
Dc Current Gain Hfe Min IC Vce
200 @ 500mA, 2V
Power Max
1.3 W
Frequency Transition
400MHz
Transistor Type
PNP
Current Collector IC Max
3 A
Voltage Collector Emitter Breakdown Max
30 V
Alternate Parts Comparison (CPH6122-TL-E vs CPH3362-TL-W vs CPH3461-TL-W vs CPH3462-TL-W)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | SOT-23-6 Thin, TSOT-23-6 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) |
| Lifecycle Status | Obsolete | Obsolete | Obsolete | Obsolete |
| Description | TRANS PNP 30V 3A 6-CPH | MOSFET P-CH 100V 700MA 3CPH | MOSFET N-CH 250V 350MA 3CPH | MOSFET N-CH 100V 1A 3CPH |
| Detailed Description | Bipolar (BJT) Transistor PNP 30 V 3 A 400MHz 1.3 W Surface Mount 6-CPH | P-Channel 100 V 700mA (Ta) 1W (Ta) Surface Mount 3-CPH | N-Channel 250 V 350mA (Ta) 1W (Ta) Surface Mount 3-CPH | N-Channel 100 V 1A (Ta) 1W (Ta) Surface Mount 3-CPH |
| Current Continuous Drain ID 25 C | -- | 700mA (Ta) | 350mA (Ta) | 1A (Ta) |
| Drain to Source Voltage Vdss | -- | 100 V | 250 V | 100 V |
| Drive Voltage Max Rds on Min Rds on | -- | 4V, 10V | 2.5V, 4.5V | 4V, 10V |
| Fet Type | -- | P-Channel | N-Channel | N-Channel |
| Gate Charge Qg Max Vgs | -- | 3.7 nC @ 10 V | 2.1 nC @ 4.5 V | 3.4 nC @ 10 V |
| Input Capacitance Ciss Max Vds | -- | 142 pF @ 20 V | 140 pF @ 20 V | 155 pF @ 20 V |
| Action |
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