onsemi MMUN2211LT3G BJTs
NPN BJT Transistor, 50V, 100mA, SOT-23
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MMUN2211LT3G
Base Model
Detailed Description
NPN BJT Transistor, 50V, 100mA, SOT-23
Package
TO-236-3, SC-59, SOT-23-3
Lifecycle Status
Active
Datasheet
MMUN2211LT3G Datasheet
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Technical Specifications
onsemi MMUN2211LT3G BJTs technical specifications.
General
Package / Case
TO-236-3, SC-59, SOT-23-3
Mounting Type
Surface Mount
Lifecycle Status
Active
Resistor Emitter Base R2
10 kOhms
Dc Current Gain Hfe Min IC Vce
35 @ 5mA, 10V
Vce Saturation Max Ib IC
250mV @ 300µA, 10mA
Current Collector Cutoff Max
500nA
Transistor Type
NPN - Pre-Biased
Power Max
246 mW
Current Collector IC Max
100 mA
Alternate Parts Comparison (MMUN2211LT3G vs MMUN2211LT1G vs SMMBFJ175LT1G vs NSVMMBT5087LT1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Lifecycle Status | Active | Active | Active | Active |
| Description | TRANS PREBIAS NPN 50V SOT23-3 | TRANS PREBIAS NPN 50V SOT23-3 | JFET P-CH 30V SOT23-3 | TRANS PNP 50V 0.05A SOT23-3 |
| Detailed Description | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 246 mW Surface Mount SOT-23-3 (TO-236) | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 246 mW Surface Mount SOT-23-3 (TO-236) | JFET P-Channel 30 V 225 mW Surface Mount SOT-23-3 (TO-236) | Bipolar (BJT) Transistor PNP 50 V 50 mA 40MHz 225 mW Surface Mount SOT-23-3 (TO-236) |
| Power Max | 246 mW | 246 mW | 225 mW | 225 mW |
| Current Collector Cutoff Max | 500nA | 500nA | -- | 50nA (ICBO) |
| Current Collector IC Max | 100 mA | 100 mA | -- | 50 mA |
| Dc Current Gain Hfe Min IC Vce | 35 @ 5mA, 10V | 35 @ 5mA, 10V | -- | 250 @ 100µA, 5V |
| Transistor Type | NPN - Pre-Biased | NPN - Pre-Biased | -- | PNP |
| Vce Saturation Max Ib IC | 250mV @ 300µA, 10mA | 250mV @ 300µA, 10mA | -- | 300mV @ 1mA, 10mA |
| Voltage Collector Emitter Breakdown Max | 50 V | 50 V | -- | 50 V |
| Action |
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