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onsemi MMUN2211LT1G BJTs

NPN Digital BJT 50V 100mA SOT-23 Transistor

294,564 ActiveonsemiMMUN2211LTSOT-23$0.04
MMUN2211LT1G - No Image Available

Same model may have multiple batches, images only for reference.

MMUN2211LT1G
Manufacturer
Part Number (MPN)
MMUN2211LT1G
Base Model
Detailed Description
NPN Digital BJT 50V 100mA SOT-23 Transistor
Package
SOT-23
Lifecycle Status
Active
Datasheet
PDF MMUN2211LT1G Datasheet
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Ordering Code Family

MMUN2211LT groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

2 ordering variants listed on the family page.

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Technical Specifications

onsemi MMUN2211LT1G BJTs technical specifications.

General

Package / Case
TO-236-3, SC-59, SOT-23-3
Mounting Type
Surface Mount
Lifecycle Status
Active
Description
TRANS PREBIAS NPN 50V SOT23-3
Detailed Description
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 246 mW Surface Mount SOT-23-3 (TO-236)
Resistor Emitter Base R2
10 kOhms
Dc Current Gain Hfe Min IC Vce
35 @ 5mA, 10V
Vce Saturation Max Ib IC
250mV @ 300µA, 10mA
Current Collector Cutoff Max
500nA
Transistor Type
NPN - Pre-Biased

Alternate Parts Comparison (MMUN2211LT1G vs MMUN2211LT3G vs MMUN2213LT1G vs BC849CLT1G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Lifecycle StatusActiveActiveActiveActive
Current Collector Cutoff Max500nA500nA500nA15nA (ICBO)
Current Collector IC Max100 mA100 mA100 mA100 mA
Dc Current Gain Hfe Min IC Vce35 @ 5mA, 10V35 @ 5mA, 10V80 @ 5mA, 10V420 @ 2mA, 5V
DescriptionTRANS PREBIAS NPN 50V SOT23-3TRANS PREBIAS NPN 50V SOT23-3TRANS PREBIAS NPN 50V SOT23-3TRANS NPN 30V 0.1A SOT23-3
Detailed DescriptionPre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 246 mW Surface Mount SOT-23-3 (TO-236)Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 246 mW Surface Mount SOT-23-3 (TO-236)Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 246 mW Surface Mount SOT-23-3 (TO-236)Bipolar (BJT) Transistor NPN 30 V 100 mA 100MHz 300 mW Surface Mount SOT-23-3 (TO-236)
Power Max246 mW246 mW246 mW300 mW
Transistor TypeNPN - Pre-BiasedNPN - Pre-BiasedNPN - Pre-BiasedNPN
Vce Saturation Max Ib IC250mV @ 300µA, 10mA250mV @ 300µA, 10mA250mV @ 300µA, 10mA600mV @ 5mA, 100mA
Voltage Collector Emitter Breakdown Max50 V50 V50 V30 V
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