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onsemi MMBTA56LT3G BJTs

PNP BJT Transistor, 80V, 500mA, 50MHz, SOT-23

200 ActiveonsemiMMBTA56LTTO-236-3, SC-59, SOT-23-3$0.05
MMBTA56LT3G - No Image Available

Same model may have multiple batches, images only for reference.

MMBTA56LT3G
Manufacturer
Part Number (MPN)
MMBTA56LT3G
Base Model
Detailed Description
PNP BJT Transistor, 80V, 500mA, 50MHz, SOT-23
Package
TO-236-3, SC-59, SOT-23-3
Lifecycle Status
Active
Datasheet
PDF MMBTA56LT3G Datasheet
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Ordering Code Family

MMBTA56LT groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

2 ordering variants listed on the family page.

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Technical Specifications

onsemi MMBTA56LT3G BJTs technical specifications.

General

Package / Case
TO-236-3, SC-59, SOT-23-3
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
100 @ 100mA, 1V
Power Max
225 mW
Frequency Transition
50MHz
Transistor Type
PNP
Current Collector IC Max
500 mA
Voltage Collector Emitter Breakdown Max
80 V

Alternate Parts Comparison (MMBTA56LT3G vs MMBTA56LT1G vs SMMBFJ175LT1G vs NSVMMUN2112LT1G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Lifecycle StatusActiveActiveActiveActive
DescriptionTRANS PNP 80V 0.5A SOT23-3TRANS PNP 80V 0.5A SOT23-3JFET P-CH 30V SOT23-3TRANS PREBIAS PNP 50V SOT23-3
Detailed DescriptionBipolar (BJT) Transistor PNP 80 V 500 mA 50MHz 225 mW Surface Mount SOT-23-3 (TO-236)Bipolar (BJT) Transistor PNP 80 V 500 mA 50MHz 225 mW Surface Mount SOT-23-3 (TO-236)JFET P-Channel 30 V 225 mW Surface Mount SOT-23-3 (TO-236)Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 246 mW Surface Mount SOT-23-3 (TO-236)
Power Max225 mW225 mW225 mW246 mW
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)--
Current Collector Cutoff Max100nA100nA (ICBO)--500nA
Current Collector IC Max500 mA500 mA--100 mA
Dc Current Gain Hfe Min IC Vce100 @ 100mA, 1V100 @ 100mA, 1V--60 @ 5mA, 10V
Transistor TypePNPPNP--PNP - Pre-Biased
Vce Saturation Max Ib IC250mV @ 10mA, 100mA250mV @ 10mA, 100mA--250mV @ 300µA, 10mA
Action

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