onsemi MMBTA56LT1G BJTs
PNP BJT Transistor, 80V, 500mA, 50MHz, SOT-23

Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MMBTA56LT1G
Base Model
Detailed Description
PNP BJT Transistor, 80V, 500mA, 50MHz, SOT-23
Package
SOT-23
Lifecycle Status
Active
Datasheet
MMBTA56LT1G Datasheet
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Technical Specifications
onsemi MMBTA56LT1G BJTs technical specifications.
General
Package / Case
TO-236-3, SC-59, SOT-23-3
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
100 @ 100mA, 1V
Power Max
225 mW
Frequency Transition
50MHz
Transistor Type
PNP
Current Collector IC Max
500 mA
Voltage Collector Emitter Breakdown Max
80 V
Alternate Parts Comparison (MMBTA56LT1G vs MMBTA56LT3G vs MMUN2213LT1G vs BC849CLT1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Lifecycle Status | Active | Active | Active | Active |
| Current Collector Cutoff Max | 100nA (ICBO) | 100nA | 500nA | 15nA (ICBO) |
| Current Collector IC Max | 500 mA | 500 mA | 100 mA | 100 mA |
| Dc Current Gain Hfe Min IC Vce | 100 @ 100mA, 1V | 100 @ 100mA, 1V | 80 @ 5mA, 10V | 420 @ 2mA, 5V |
| Description | TRANS PNP 80V 0.5A SOT23-3 | TRANS PNP 80V 0.5A SOT23-3 | TRANS PREBIAS NPN 50V SOT23-3 | TRANS NPN 30V 0.1A SOT23-3 |
| Detailed Description | Bipolar (BJT) Transistor PNP 80 V 500 mA 50MHz 225 mW Surface Mount SOT-23-3 (TO-236) | Bipolar (BJT) Transistor PNP 80 V 500 mA 50MHz 225 mW Surface Mount SOT-23-3 (TO-236) | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 246 mW Surface Mount SOT-23-3 (TO-236) | Bipolar (BJT) Transistor NPN 30 V 100 mA 100MHz 300 mW Surface Mount SOT-23-3 (TO-236) |
| Power Max | 225 mW | 225 mW | 246 mW | 300 mW |
| Transistor Type | PNP | PNP | NPN - Pre-Biased | NPN |
| Vce Saturation Max Ib IC | 250mV @ 10mA, 100mA | 250mV @ 10mA, 100mA | 250mV @ 300µA, 10mA | 600mV @ 5mA, 100mA |
| Voltage Collector Emitter Breakdown Max | 80 V | 80 V | 50 V | 30 V |
| Action |
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