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onsemi MMBT5550LT1G BJTs

Trans GP BJT NPN 140V 0.6A 300mW 3-Pin SOT-23 T/R

30,002 ActiveonsemiMMBT5550LTTO-236-3, SC-59, SOT-23-3$0.03
MMBT5550LT1G - No Image Available

Same model may have multiple batches, images only for reference.

MMBT5550LT1G
Manufacturer
Part Number (MPN)
MMBT5550LT1G
Base Model
Detailed Description
Trans GP BJT NPN 140V 0.6A 300mW 3-Pin SOT-23 T/R
Package
TO-236-3, SC-59, SOT-23-3
Lifecycle Status
Active
Datasheet
PDF MMBT5550LT1G Datasheet
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Ordering Code Family

MMBT5550LT groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

2 ordering variants listed on the family page.

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Technical Specifications

onsemi MMBT5550LT1G BJTs technical specifications.

General

Package / Case
TO-236-3, SC-59, SOT-23-3
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Current Collector Cutoff Max
100nA
Dc Current Gain Hfe Min IC Vce
60 @ 10mA, 5V
Power Max
225 mW
Transistor Type
NPN
Current Collector IC Max
600 mA
Voltage Collector Emitter Breakdown Max
140 V

Alternate Parts Comparison (MMBT5550LT1G vs MMBT5550LT3G vs MMBT5089LT1G vs SMMBFJ175LT1G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Lifecycle StatusActiveActiveActiveActive
DescriptionTRANS NPN 140V 0.6A SOT23-3TRANS NPN 140V 0.6A SOT23-3TRANS NPN 25V 0.05A SOT23-3JFET P-CH 30V SOT23-3
Detailed DescriptionBipolar (BJT) Transistor NPN 140 V 600 mA 225 mW Surface Mount SOT-23-3 (TO-236)Bipolar (BJT) Transistor NPN 140 V 600 mA 225 mW Surface Mount SOT-23-3 (TO-236)Bipolar (BJT) Transistor NPN 25 V 50 mA 50MHz 300 mW Surface Mount SOT-23-3 (TO-236)JFET P-Channel 30 V 225 mW Surface Mount SOT-23-3 (TO-236)
Power Max225 mW225 mW300 mW225 mW
Current Collector Cutoff Max100nA100nA50nA (ICBO)--
Current Collector IC Max600 mA600 mA50 mA--
Dc Current Gain Hfe Min IC Vce60 @ 10mA, 5V60 @ 10mA, 5V400 @ 100µA, 5V--
Transistor TypeNPNNPNNPN--
Vce Saturation Max Ib IC250mV @ 5mA, 50mA250mV @ 5mA, 50mA500mV @ 1mA, 10mA--
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