onsemi MMBT5550LT3G BJTs
High Voltage NPN Bipolar Transistor, SOT-23 (TO-236) 3 LEAD, 10000-REEL
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MMBT5550LT3G
Base Model
Detailed Description
High Voltage NPN Bipolar Transistor, SOT-23 (TO-236) 3 LEAD, 10000-REEL
Package
SOT-23
Lifecycle Status
Active
Datasheet
MMBT5550LT3G Datasheet
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Technical Specifications
onsemi MMBT5550LT3G BJTs technical specifications.
General
Series
MMBT5550L
RoHS
Yes
Package / Case
TO-236-3, SC-59, SOT-23-3
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Current Collector Cutoff Max
100nA
Dc Current Gain Hfe Min IC Vce
60 @ 10mA, 5V
Power Max
225 mW
Transistor Type
NPN
Related Parts Comparison (MMBT5550LT3G vs MMBT5550LT1G vs MMBT5551LT1G vs MMUN2213LT1G)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| Package / Case | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| RoHS | Yes | Yes | Yes | Yes |
| Lifecycle Status | Active | Active | Active | Active |
| Current Collector Cutoff Max | 100nA | 100nA | 100nA | 500nA |
| Current Collector IC Max | 600 mA | 600 mA | 600 mA | 100 mA |
| Dc Current Gain Hfe Min IC Vce | 60 @ 10mA, 5V | 60 @ 10mA, 5V | 80 @ 10mA, 5V | 80 @ 5mA, 10V |
| Package | SOT-23-3 | SOT23-3 | SOT23-3 | SOT23-3 |
| Power Max | 225 mW | 225 mW | 225 mW | 246 mW |
| Transistor Type | NPN | NPN | NPN | NPN - Pre-Biased |
| Vce Saturation Max Ib IC | 250mV @ 5mA, 50mA | 250mV @ 5mA, 50mA | 200mV @ 5mA, 50mA | 250mV @ 300µA, 10mA |
| Voltage Collector Emitter Breakdown Max | 140 V | 140 V | 160 V | 50 V |
| Action |
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