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onsemi MMBT5550LT3G BJTs

High Voltage NPN Bipolar Transistor, SOT-23 (TO-236) 3 LEAD, 10000-REEL

1,260,000 ActiveonsemiMMBT5550LTSOT-23$0.04
MMBT5550LT3G - No Image Available

Same model may have multiple batches, images only for reference.

MMBT5550LT3G
Manufacturer
Part Number (MPN)
MMBT5550LT3G
Base Model
Detailed Description
High Voltage NPN Bipolar Transistor, SOT-23 (TO-236) 3 LEAD, 10000-REEL
Package
SOT-23
Lifecycle Status
Active
Datasheet
PDF MMBT5550LT3G Datasheet
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Ordering Code Family

MMBT5550LT groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

2 ordering variants listed on the family page.

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Technical Specifications

onsemi MMBT5550LT3G BJTs technical specifications.

General

Package / Case
TO-236-3, SC-59, SOT-23-3
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Current Collector Cutoff Max
100nA
Dc Current Gain Hfe Min IC Vce
60 @ 10mA, 5V
Power Max
225 mW
Transistor Type
NPN
Current Collector IC Max
600 mA
Voltage Collector Emitter Breakdown Max
140 V

Alternate Parts Comparison (MMBT5550LT3G vs MMBT5550LT1G vs MMBT5551LT1G vs MMUN2213LT1G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Lifecycle StatusActiveActiveActiveActive
Current Collector Cutoff Max100nA100nA100nA500nA
Current Collector IC Max600 mA600 mA600 mA100 mA
Dc Current Gain Hfe Min IC Vce60 @ 10mA, 5V60 @ 10mA, 5V80 @ 10mA, 5V80 @ 5mA, 10V
DescriptionTRANS NPN 140V 0.6A SOT23-3TRANS NPN 140V 0.6A SOT23-3TRANS NPN 160V 0.6A SOT23-3TRANS PREBIAS NPN 50V SOT23-3
Detailed DescriptionBipolar (BJT) Transistor NPN 140 V 600 mA 225 mW Surface Mount SOT-23-3 (TO-236)Bipolar (BJT) Transistor NPN 140 V 600 mA 225 mW Surface Mount SOT-23-3 (TO-236)Bipolar (BJT) Transistor NPN 160 V 600 mA 225 mW Surface Mount SOT-23-3 (TO-236)Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 246 mW Surface Mount SOT-23-3 (TO-236)
Power Max225 mW225 mW225 mW246 mW
Transistor TypeNPNNPNNPNNPN - Pre-Biased
Vce Saturation Max Ib IC250mV @ 5mA, 50mA250mV @ 5mA, 50mA200mV @ 5mA, 50mA250mV @ 300µA, 10mA
Voltage Collector Emitter Breakdown Max140 V140 V160 V50 V
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