onsemi MJD117T4G BJTs
PNP Darlington Transistor 100V 2A DPAK 1.75W 25MHz
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MJD117T4G
Base Model
Detailed Description
PNP Darlington Transistor 100V 2A DPAK 1.75W 25MHz
Package
TO-252-3, DPAK (2 Leads + Tab), SC-63
Lifecycle Status
Active
Datasheet
MJD117T4G Datasheet
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Technical Specifications
onsemi MJD117T4G BJTs technical specifications.
General
Package / Case
TO-252-3, DPAK
Mounting Type
Surface Mount
Operating Temperature
-65°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
1000 @ 2A, 3V
Power Max
1.75 W
Frequency Transition
25MHz
Transistor Type
PNP - Darlington
Current Collector IC Max
2 A
Voltage Collector Emitter Breakdown Max
100 V
Alternate Parts Comparison (MJD117T4G vs MJD117T4 vs MJD117TF vs MJD3055T4G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Operating Temperature | -65°C ~ 150°C (TJ) | -- | 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Number of Pins | -- | -- | -- | 3 |
| RoHS | -- | -- | -- | Compliant |
| Lifecycle Status | Active | -- | Obsolete | Active |
| China ROHS | -- | -- | -- | Non-Compliant |
| Collector Base Voltage Vcbo | -- | -- | -- | 70 V |
| Collector Emitter Breakdown Voltage | -- | -- | -- | 60 V |
| Collector Emitter Saturation Voltage | -- | -- | -- | 1.1 V |
| Collector Emitter Voltage Vceo | -- | -- | -- | 60 V |
| Current Rating | -- | -- | -- | 10 A |
| Element Configuration | -- | -- | -- | Single |
| Emitter Base Voltage Vebo | -- | -- | -- | 5 V |
| Action |