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onsemi MJD117T4 BJTs

2.0 A, 100 V PNP Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL

1,222 ActiveonsemiMJD117TTO-252-3$0.38
MJD117T4 TO-252-3 package illustration

Same model may have multiple batches, images only for reference.

MJD117T4
Manufacturer
Part Number (MPN)
MJD117T4
Base Model
Detailed Description
2.0 A, 100 V PNP Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL
Package
TO-252-3
Lifecycle Status
Active
Datasheet
PDF MJD117T4 Datasheet
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Ordering Code Family

MJD117T groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

2 ordering variants listed on the family page.

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Technical Specifications

onsemi MJD117T4 BJTs technical specifications.

General

RoHS
No
Number of Pins
3
Package / Case
TO-252-3
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Lifecycle Status
Active
Collector Base Voltage Vcbo
100 V
Collector Emitter Breakdown Voltage
100 V
Collector Emitter Saturation Voltage
2 V
Collector Emitter Voltage Vceo
100 V

Alternate Parts Comparison (MJD117T4 vs MJD117TF vs MJD117T4G vs MJD3055T4G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-252-3TO-252-3, DPAKTO-252-3, DPAKTO-252-3, DPAK
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature150°C (TJ)150°C (TJ)-65°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
RoHSNoYesYesCompliant
Lifecycle StatusActiveObsoleteActiveProduction
Current Collector Cutoff Max20 µA20µA20µA50µA
Current Collector IC Max2 A2 A2 A10 A
Dc Current Gain Hfe Min IC Vce1000 @ 2A, 3V1000 @ 2A, 3V1000 @ 2A, 3V20 @ 4A, 4V
Power Max20 W1.75 W1.75 W1.75 W
Transistor TypePNP - DarlingtonPNP - DarlingtonPNP - DarlingtonNPN
Vce Saturation Max Ib IC3V @ 40mA, 4A3V @ 40mA, 4A3V @ 40mA, 4A8V @ 3.3A, 10A
Voltage Collector Emitter Breakdown Max100 V100 V100 V60 V
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