onsemi KSC1730YBU RF BJT
RF Transistor NPN 15V 50mA 1.1GHz 250mW Through Hole TO-92-3
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
KSC1730YBU
Detailed Description
RF Transistor NPN 15V 50mA 1.1GHz 250mW Through Hole TO-92-3
Package
TO-226-3, TO-92-3 (TO-226AA)
Lifecycle Status
Obsolete
Datasheet
KSC1730YBU Datasheet
Quick Jump:
Technical Specifications
onsemi KSC1730YBU RF BJT technical specifications.
General
Package / Case
TO-226-3, TO-92-3
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Lifecycle Status
Obsolete
Dc Current Gain Hfe Min IC Vce
120 @ 5mA, 10V
Current Collector IC Max
50mA
Transistor Type
NPN
Voltage Collector Emitter Breakdown Max
15V
Frequency Transition
1.1GHz
Power Max
250mW
Alternate Parts Comparison (KSC1730YBU vs KSC2383YTA vs KSC1008CYTA vs KSC2334YTU)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Through Hole | Through Hole | -- | -- |
| Operating Temperature | 150°C (TJ) | 150°C (TJ) | -- | -- |
| Number of Pins | -- | 3 | -- | -- |
| RoHS | -- | Compliant | -- | -- |
| Lifecycle Status | Obsolete | Active | -- | -- |
| China ROHS | -- | Compliant | -- | -- |
| Collector Base Voltage Vcbo | -- | 160 V | -- | -- |
| Collector Emitter Breakdown Voltage | -- | 160 V | -- | -- |
| Collector Emitter Saturation Voltage | -- | 1.5 V | -- | -- |
| Collector Emitter Voltage Vceo | -- | 160 V | -- | -- |
| Current Rating | -- | 1 A | -- | -- |
| Element Configuration | -- | Single | -- | -- |
| Action |
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