onsemi KSC1008CYTA BJTs
NPN BJT Transistor, 60V VCEO, 700mA IC, 50MHz fT, TO-92
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
KSC1008CYTA
Detailed Description
NPN BJT Transistor, 60V VCEO, 700mA IC, 50MHz fT, TO-92
Package
TO-92
Lifecycle Status
Active
Datasheet
KSC1008CYTA Datasheet
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Technical Specifications
onsemi KSC1008CYTA BJTs technical specifications.
General
Package / Case
TO-226-3, TO-92-3
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Lifecycle Status
Active
Description
TRANS NPN 60V 0.7A TO-92-3
Detailed Description
Bipolar (BJT) Transistor NPN 60 V 700 mA 50MHz 800 mW Through Hole TO-92-3
Dc Current Gain Hfe Min IC Vce
120 @ 50mA, 2V
Power Max
800 mW
Frequency Transition
50MHz
Transistor Type
NPN
Alternate Parts Comparison (KSC1008CYTA vs KSC2383YTA vs KSC2334YTU vs KSC5603DTU)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operating Temperature | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) |
| Number of Pins | -- | 3 | -- | -- |
| RoHS | -- | Compliant | -- | -- |
| Lifecycle Status | Active | Active | Active | Active |
| China ROHS | -- | Compliant | -- | -- |
| Collector Base Voltage Vcbo | -- | 160 V | -- | -- |
| Collector Emitter Breakdown Voltage | -- | 160 V | -- | -- |
| Collector Emitter Saturation Voltage | -- | 1.5 V | -- | -- |
| Collector Emitter Voltage Vceo | -- | 160 V | -- | -- |
| Current Rating | -- | 1 A | -- | -- |
| Element Configuration | -- | Single | -- | -- |
| Action |
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