onsemi KSC1008CYTA BJTs
NPN BJT Transistor, 60V VCEO, 700mA IC, 50MHz fT, TO-92
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
KSC1008CYTA
Detailed Description
NPN BJT Transistor, 60V VCEO, 700mA IC, 50MHz fT, TO-92
Package
TO-92
Lifecycle Status
Active
Datasheet
KSC1008CYTA Datasheet
Quick Jump:
Technical Specifications
onsemi KSC1008CYTA BJTs technical specifications.
General
RoHS
Yes
Package / Case
TO-226-3, TO-92-3
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
120 @ 50mA, 2V
Power Max
800 mW
Frequency Transition
50MHz
Transistor Type
NPN
Current Collector IC Max
700 mA
Alternate Parts Comparison (KSC1008CYTA vs KSC2383YTA vs KSC2334YTU vs KSC5603DTU)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-226-3, TO-92-3 | TO-226-3, TO-92-3 Long Body, Formed Leads | TO-220-3 | TO-220-3 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operating Temperature | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) |
| Lifecycle Status | Active | Production | Active | Active |
| Current Collector Cutoff Max | 100nA (ICBO) | 1µA (ICBO) | 10µA (ICBO) | 100µA |
| Current Collector IC Max | 700 mA | 1 A | 7 A | 3 A |
| Dc Current Gain Hfe Min IC Vce | 120 @ 50mA, 2V | 160 @ 200mA, 5V | 120 @ 3A, 5V | 20 @ 400mA, 3V |
| Power Max | 800 mW | 900 mW | 1.5 W | 100 W |
| Transistor Type | NPN | NPN | NPN | NPN |
| Vce Saturation Max Ib IC | 400mV @ 50mA, 500mA | 1.5V @ 50mA, 500mA | 600mV @ 500mA, 5A | 2.5V @ 200µA, 1A |
| Voltage Collector Emitter Breakdown Max | 60 V | 160 V | 100 V | 800 V |
| RoHS | Yes | Compliant | Yes | -- |
| Action |
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