onsemi HGTG12N60A4D BJTs
600V 60A IGBT Transistor, TO-247, 167W, 30ns RR
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
HGTG12N60A4D
Detailed Description
600V 60A IGBT Transistor, TO-247, 167W, 30ns RR
Package
TO-247-3
Lifecycle Status
Obsolete
Datasheet
HGTG12N60A4D Datasheet
Quick Jump:
Technical Specifications
onsemi HGTG12N60A4D BJTs technical specifications.
General
Series
HGTG12N60A4D
RoHS
Yes
Package / Case
TO-247-3
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Obsolete
Input Type
Standard
Gate Charge
78 nC
Td on Off 25 C
17ns/96ns
Test Condition
390V, 12A, 10Ohm, 15V
Alternate Parts Comparison (HGTG12N60A4D vs HGTG11N120CND vs MBT3906DW1T1G vs BC847CDW1T1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-247-3 | TO-247-3 | 6-TSSOP | 6-TSSOP |
| Mounting Type | Through Hole | Through Hole | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| RoHS | Yes | Yes | Compliant | Compliant |
| Lifecycle Status | Obsolete | Obsolete | Production | Production |
| Collector Emitter Saturation Voltage | 2 V | 2.1 V | -400 mV | 600 mV |
| Current Collector IC Max | 54 A | 43 A | 200mA | 100mA |
| Package | TO-247-3 | TO-247-3 | SOT-363-6 | SOT-363-6 |
| Power Max | 167 W | 298 W | 150mW | 380mW |
| Voltage Collector Emitter Breakdown Max | 600 V | 1200 V | 40V | 45V |
| Action |
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