onsemi HGTG12N60A4D BJTs
600V 60A IGBT Transistor, TO-247, 167W, 30ns RR
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
HGTG12N60A4D
Detailed Description
600V 60A IGBT Transistor, TO-247, 167W, 30ns RR
Package
TO-247-3
Lifecycle Status
Obsolete
Datasheet
HGTG12N60A4D Datasheet
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Technical Specifications
onsemi HGTG12N60A4D BJTs technical specifications.
General
Package / Case
TO-247-3
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Obsolete
Input Type
Standard
Gate Charge
78 nC
Td on Off 25 C
17ns/96ns
Test Condition
390V, 12A, 10Ohm, 15V
Voltage Collector Emitter Breakdown Max
600 V
Reverse Recovery Time Trr
30 ns
Alternate Parts Comparison (HGTG12N60A4D vs HGTG11N120CND vs MBT3906DW1T1G vs BC847CDW1T1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Number of Pins | -- | -- | 6 | 6 |
| RoHS | -- | -- | Compliant | Compliant |
| Lifecycle Status | Obsolete | Obsolete | Production | Production |
| China ROHS | -- | -- | Compliant | Compliant |
| Collector Base Voltage Vcbo | -- | -- | 40 V | 50 V |
| Collector Emitter Breakdown Voltage | -- | -- | 40 V | 45 V |
| Collector Emitter Saturation Voltage | -- | -- | -400 mV | 600 mV |
| Collector Emitter Voltage Vceo | -- | -- | 40 V | 45 V |
| Contact Plating | -- | -- | Tin | Tin |
| Current Rating | -- | -- | -200 mA | 100 mA |
| Element Configuration | -- | -- | Dual | Dual |
| Action |
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