onsemi FGY120T65SPD-F085 BJTs
IGBTs 650V FS Trench IGBT Gen3
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
FGY120T65SPD-F085
Detailed Description
IGBTs 650V FS Trench IGBT Gen3
Package
TO-247-3
Lifecycle Status
Active
Datasheet
FGY120T65SPD-F085 Datasheet
Quick Jump:
Technical Specifications
onsemi FGY120T65SPD-F085 BJTs technical specifications.
General
Package / Case
TO-247-3
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Gate Charge
162 nC
Td on Off 25 C
53ns/102ns
Test Condition
400V, 120A, 5Ohm, 15V
Reverse Recovery Time Trr
123 ns
Igbt Type
Trench Field Stop
Voltage Collector Emitter Breakdown Max
650 V
Alternate Parts Comparison (FGY120T65SPD-F085 vs MJH11020G vs MJW18020G vs MJH11022G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) |
| Lifecycle Status | Active | Active | Active | Active |
| Current Collector IC Max | 240 A | 15 A | 30 A | 15 A |
| Power Max | 882 W | 150 W | 250 W | 150 W |
| Voltage Collector Emitter Breakdown Max | 650 V | 200 V | 450 V | 250 V |
| Current Collector Cutoff Max | -- | 1mA | 100µA | 1mA |
| Dc Current Gain Hfe Min IC Vce | -- | 400 @ 10A, 5V | 14 @ 3A, 5V | 400 @ 10A, 5V |
| Frequency Transition | -- | 3MHz | 13MHz | 3MHz |
| Transistor Type | -- | NPN - Darlington | NPN | NPN - Darlington |
| Vce Saturation Max Ib IC | -- | 4V @ 150mA, 15A | 1.5V @ 4A, 20A | 4V @ 150mA, 15A |
| Action |
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