onsemi 2N6517BU BJTs
Bipolar Transistors - BJT NPN Si Transistor Epitaxial
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
2N6517BU
Base Model
Detailed Description
Bipolar Transistors - BJT NPN Si Transistor Epitaxial
Package
TO-226-3, TO-92-3 (TO-226AA)
Lifecycle Status
Obsolete
Datasheet
2N6517BU Datasheet
Quick Jump:
Technical Specifications
onsemi 2N6517BU BJTs technical specifications.
General
Package / Case
TO-226-3, TO-92-3
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Lifecycle Status
Obsolete
Description
TRANS NPN 350V 0.5A TO-92-3
Detailed Description
Bipolar (BJT) Transistor NPN 350 V 500 mA 200MHz 625 mW Through Hole TO-92-3
Dc Current Gain Hfe Min IC Vce
20 @ 50mA, 10V
Power Max
625 mW
Frequency Transition
200MHz
Transistor Type
NPN
Alternate Parts Comparison (2N6517BU vs MBT3906DW1T1G vs BC847CDW1T1G vs BC847CLT1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Operating Temperature | 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Number of Pins | -- | 6 | 6 | 3 |
| RoHS | -- | Compliant | Compliant | Compliant |
| Lifecycle Status | Obsolete | Active | Active | Active |
| China ROHS | -- | Compliant | Compliant | Compliant |
| Collector Base Voltage Vcbo | -- | 40 V | 50 V | 50 V |
| Collector Emitter Breakdown Voltage | -- | 40 V | 45 V | 45 V |
| Collector Emitter Saturation Voltage | -- | -400 mV | 600 mV | 600 mV |
| Collector Emitter Voltage Vceo | -- | 40 V | 45 V | 45 V |
| Contact Plating | -- | Tin | Tin | Tin |
| Current Rating | -- | -200 mA | 100 mA | 100 mA |
| Element Configuration | -- | Dual | Dual | Single |
| Action |
More Parts in BJTs
Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.