onsemi 2N6517 BJTs
TRANS NPN 350V 0.5A TO92
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
2N6517
Base Model
Detailed Description
TRANS NPN 350V 0.5A TO92
Package
TO-226-3, TO-92-3 Long Body
Lifecycle Status
Obsolete
Datasheet
2N6517 Datasheet
Quick Jump:
Technical Specifications
onsemi 2N6517 BJTs technical specifications.
General
Package / Case
TO-226-3, TO-92-3 Long Body
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Obsolete
Dc Current Gain Hfe Min IC Vce
20 @ 50mA, 10V
Power Max
625 mW
Frequency Transition
200MHz
Transistor Type
NPN
Current Collector IC Max
500 mA
Voltage Collector Emitter Breakdown Max
350 V
Alternate Parts Comparison (2N6517 vs MBT3906DW1T1G vs BC847CDW1T1G vs BC847CLT1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Number of Pins | -- | 6 | 6 | 3 |
| RoHS | -- | Compliant | Compliant | Compliant |
| Lifecycle Status | Obsolete | Active | Active | Active |
| China ROHS | -- | Compliant | Compliant | Compliant |
| Collector Base Voltage Vcbo | -- | 40 V | 50 V | 50 V |
| Collector Emitter Breakdown Voltage | -- | 40 V | 45 V | 45 V |
| Collector Emitter Saturation Voltage | -- | -400 mV | 600 mV | 600 mV |
| Collector Emitter Voltage Vceo | -- | 40 V | 45 V | 45 V |
| Contact Plating | -- | Tin | Tin | Tin |
| Current Rating | -- | -200 mA | 100 mA | 100 mA |
| Element Configuration | -- | Dual | Dual | Single |
| Action |
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