onsemi BC516 BJTs
PNP BJT 30V 1A TO-92 Through Hole
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BC516
Detailed Description
PNP BJT 30V 1A TO-92 Through Hole
Package
TO-226-3, TO-92-3 (TO-226AA)
Lifecycle Status
Obsolete
Datasheet
BC516 Datasheet
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Technical Specifications
onsemi BC516 BJTs technical specifications.
General
Package / Case
TO-226-3, TO-92-3
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Obsolete
Description
TRANS PNP DARL 30V 1A TO-92-3
Detailed Description
Bipolar (BJT) Transistor PNP - Darlington 30 V 1 A 200MHz 625 mW Through Hole TO-92-3
Dc Current Gain Hfe Min IC Vce
30000 @ 20mA, 2V
Power Max
625 mW
Frequency Transition
200MHz
Transistor Type
PNP - Darlington
Alternate Parts Comparison (BC516 vs BC847CDW1T1G vs BC847CLT1G vs BC847ALT1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Number of Pins | -- | 6 | 3 | 3 |
| RoHS | -- | Compliant | Compliant | Compliant |
| Lifecycle Status | Obsolete | Active | Active | Active |
| China ROHS | -- | Compliant | Compliant | Compliant |
| Collector Base Voltage Vcbo | -- | 50 V | 50 V | 50 V |
| Collector Emitter Breakdown Voltage | -- | 45 V | 45 V | 45 V |
| Collector Emitter Saturation Voltage | -- | 600 mV | 600 mV | 600 mV |
| Collector Emitter Voltage Vceo | -- | 45 V | 45 V | 45 V |
| Contact Plating | -- | Tin | Tin | Tin |
| Current Rating | -- | 100 mA | 100 mA | 100 mA |
| Element Configuration | -- | Dual | Single | Single |
| Action |
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