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onsemi BC550CBU BJTs

Bipolar Transistors - BJT NPN 45V 100mA HFE/800

960 ActiveonsemiTO-226-3, TO-92-3 (TO-226AA)$0.33
BC550CBU - No Image Available

Same model may have multiple batches, images only for reference.

BC550CBU
Manufacturer
Part Number (MPN)
BC550CBU
Detailed Description
Bipolar Transistors - BJT NPN 45V 100mA HFE/800
Package
TO-226-3, TO-92-3 (TO-226AA)
Lifecycle Status
Active
Datasheet
PDF BC550CBU Datasheet
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Technical Specifications

onsemi BC550CBU BJTs technical specifications.

General

Package / Case
TO-226-3, TO-92-3
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Lifecycle Status
Active
Description
TRANS NPN 45V 0.1A TO-92-3
Detailed Description
Bipolar (BJT) Transistor NPN 45 V 100 mA 300MHz 500 mW Through Hole TO-92-3
Dc Current Gain Hfe Min IC Vce
420 @ 2mA, 5V
Power Max
500 mW
Frequency Transition
300MHz
Transistor Type
NPN

Alternate Parts Comparison (BC550CBU vs BC847CDW1T1G vs BC847CLT1G vs BC847ALT1G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Operating Temperature150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Number of Pins--633
RoHS--CompliantCompliantCompliant
Lifecycle StatusActiveActiveActiveActive
China ROHS--CompliantCompliantCompliant
Collector Base Voltage Vcbo--50 V50 V50 V
Collector Emitter Breakdown Voltage--45 V45 V45 V
Collector Emitter Saturation Voltage--600 mV600 mV600 mV
Collector Emitter Voltage Vceo--45 V45 V45 V
Contact Plating--TinTinTin
Current Rating--100 mA100 mA100 mA
Element Configuration--DualSingleSingle
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