onsemi PN2907ABU BJTs
Bipolar Transistors - BJT PNP Transistor General Purpose
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
PN2907ABU
Detailed Description
Bipolar Transistors - BJT PNP Transistor General Purpose
Package
TO-226-3, TO-92-3 (TO-226AA)
Lifecycle Status
Active
Datasheet
PN2907ABU Datasheet
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Technical Specifications
onsemi PN2907ABU BJTs technical specifications.
General
Package / Case
TO-226-3, TO-92-3
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Description
TRANS PNP 60V 0.8A TO-92-3
Detailed Description
Bipolar (BJT) Transistor PNP 60 V 800 mA 200MHz 625 mW Through Hole TO-92-3
Dc Current Gain Hfe Min IC Vce
100 @ 150mA, 10V
Power Max
625 mW
Frequency Transition
200MHz
Transistor Type
PNP
Alternate Parts Comparison (PN2907ABU vs PN2907BU vs PN2222ABU vs PN2907ATAR)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-226-3, TO-92-3 | TO-226-3, TO-92-3 | TO-226-3, TO-92-3 | TO-226-3, TO-92-3 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Lifecycle Status | Active | Obsolete | Active | Active |
| Current Collector Cutoff Max | 20nA (ICBO) | 20nA (ICBO) | 10nA (ICBO) | 20nA (ICBO) |
| Current Collector IC Max | 800 mA | 800 mA | 1 A | 800 mA |
| Dc Current Gain Hfe Min IC Vce | 100 @ 150mA, 10V | 100 @ 150mA, 10V | 100 @ 150mA, 10V | 100 @ 150mA, 10V |
| Description | TRANS PNP 60V 0.8A TO-92-3 | TRANS PNP 40V 0.8A TO-92-3 | TRANS NPN 40V 1A TO-92-3 | TRANS PNP 60V 0.8A TO-92-3 |
| Detailed Description | Bipolar (BJT) Transistor PNP 60 V 800 mA 200MHz 625 mW Through Hole TO-92-3 | Bipolar (BJT) Transistor PNP 40 V 800 mA 625 mW Through Hole TO-92-3 | Bipolar (BJT) Transistor NPN 40 V 1 A 300MHz 625 mW Through Hole TO-92-3 | Bipolar (BJT) Transistor PNP 60 V 800 mA 200MHz 625 mW Through Hole TO-92-3 |
| Power Max | 625 mW | 625 mW | 625 mW | 625 mW |
| Transistor Type | PNP | PNP | NPN | PNP |
| Vce Saturation Max Ib IC | 1.6V @ 50mA, 500mA | 1.6V @ 50mA, 500mA | 1V @ 50mA, 500mA | 1.6V @ 50mA, 500mA |
| Action |
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