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NXP Semiconductors PSMN2R4-30YLDX MOSFETs

N-channel 30 V, 2.4 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology

34 ActiveNXP SemiconductorsPSMN2R4SOT-669-5$3.37
PSMN2R4-30YLDX SOT-669-5 package illustration

Same model may have multiple batches, images only for reference.

PSMN2R4-30YLDX
Manufacturer
Part Number (MPN)
PSMN2R4-30YLDX
Base Model
Detailed Description
N-channel 30 V, 2.4 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology
Package
SOT-669-5
Lifecycle Status
Active
Datasheet
PDF PSMN2R4-30YLDX Datasheet
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Ordering Code Family

PSMN2R4 groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

2 ordering variants listed on the family page.

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Technical Specifications

NXP Semiconductors PSMN2R4-30YLDX MOSFETs technical specifications.

General

RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 175°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
30 V
ID Continuous Drain Current
100 A
Rds on Drain Source Resistance
2.4 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V

Alternate Parts Comparison (PSMN2R4-30YLDX vs PSMN2R4-30MLDX vs PSMN2R4-30YLDX vs PSMN1R8-40YLC,115)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
RoHSYesCompliantYesYes
Mounting TypeSMD/SMTSurface MountSMD/SMT--
Operating Temperature- 55°C ~ + 175°C-55°C ~ 175°C (TJ)- 55°C ~ + 175°C--
Number of Channels1 Channel11 Channel--
Fall Time13.9 ns13 ns13.9 ns--
PackageSOT-669-5--SOT-669-5SOT-669-5
Rise Time27.5 ns23 ns27.5 ns--
TechnologySiMOSFET (Metal Oxide)Si--
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