NXP Semiconductors PSMN011-30YLC,115 MOSFETs
N-channel 30 V 11.6 mΩ logic level MOSFET in LFPAK using NextPower technology
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
PSMN011-30YLC,115
Base Model
Detailed Description
N-channel 30 V 11.6 mΩ logic level MOSFET in LFPAK using NextPower technology
Package
SOT-669-5
Lifecycle Status
Active
Datasheet
PSMN011-30YLC,115 Datasheet
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Technical Specifications
NXP Semiconductors PSMN011-30YLC,115 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 175°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
30 V
ID Continuous Drain Current
37 A
Rds on Drain Source Resistance
11.6 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (PSMN011-30YLC,115 vs PSMN011-60MSX vs PSMN011-80YS,115 vs PSMN011-80YS,115)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Compliant | Yes | Yes |
| Package | SOT-669-5 | -- | SOT-669-5 | SOT-669-5 |
| Mounting Type | SMD/SMT | Surface Mount | -- | -- |
| Operating Temperature | - 55°C ~ + 175°C | -55°C ~ 175°C (TJ) | -- | -- |
| Number of Channels | 1 Channel | 1 | -- | -- |
| Technology | Si | MOSFET (Metal Oxide) | -- | -- |
| Channel Mode | Enhancement | -- | -- | -- |
| ID Continuous Drain Current | 37 A | -- | -- | -- |
| Part Aliases | 934066011115 | -- | -- | -- |
| Pd Power Dissipation | 29 W | -- | -- | -- |
| Qg Gate Charge | 10.3 nC | -- | -- | -- |
| Rds on Drain Source Resistance | 11.6 mOhms | -- | -- | -- |
| Action |
More Parts in MOSFETs
Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.
PSMN011-60MSXNXP SemiconductorsDiscrete Semiconductors--Transistors--FETs, MOSFETs--RF FETs, MOSFETs
