Nexperia PSMN2R4-30YLDX MOSFETs
PSMN2R4-30YLD - N-channel 30 V, 2.4 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology SOIC 4-Pin
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
PSMN2R4-30YLDX
Base Model
Detailed Description
PSMN2R4-30YLD - N-channel 30 V, 2.4 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology SOIC 4-Pin
Package
SOT-669-5
Lifecycle Status
Active
Datasheet
PSMN2R4-30YLDX Datasheet
Quick Jump:
Technical Specifications
Nexperia PSMN2R4-30YLDX MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 175°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
30 V
ID Continuous Drain Current
100 A
Rds on Drain Source Resistance
2.4 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (PSMN2R4-30YLDX vs PSMN2R4-30MLDX vs PSMN2R4-30YLDX vs PSMN1R8-40YLC,115)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | Surface Mount | SMD/SMT | Surface Mount |
| Operating Temperature | - 55°C ~ + 175°C | -55°C ~ 175°C (TJ) | - 55°C ~ + 175°C | -55°C ~ 175°C |
| RoHS | Yes | Compliant | Yes | Yes with Exemption |
| Number of Channels | 1 Channel | 1 | 1 Channel | -- |
| Channel Mode | Enhancement | -- | Enhancement | Enhancement |
| Configuration | Single | -- | Single | Single Triple Source |
| Fall Time | 13.9 ns | 13 ns | 13.9 ns | -- |
| Package | SOT-669-5 | -- | SOT-669-5 | LFPAK |
| Rise Time | 27.5 ns | 23 ns | 27.5 ns | -- |
| Technology | Si | MOSFET (Metal Oxide) | Si | -- |
| Action |
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