NXP Semiconductors BUK7Y53-100B,115 MOSFETs
N-channel TrenchMOS standard level FET
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BUK7Y53-100B,115
Base Model
Detailed Description
N-channel TrenchMOS standard level FET
Package
SOT-669-5
Lifecycle Status
Active
Datasheet
BUK7Y53-100B,115 Datasheet
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Technical Specifications
NXP Semiconductors BUK7Y53-100B,115 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 175°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
100 V
ID Continuous Drain Current
24.8 A
Rds on Drain Source Resistance
40 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Related Parts Comparison (BUK7Y53-100B,115 vs BUK7Y53-100B vs BUK7Y53-100B,115 vs BUK210-50Y,127)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | Surface Mount | SMD/SMT | Through Hole |
| Operating Temperature | - 55°C ~ + 175°C | -55°C ~ 175°C | - 55°C ~ + 175°C | 150°C (TJ) |
| RoHS | Yes | Yes with Exemption | Yes | Yes |
| Package | SOT-669-5 | LFPAK | SOT-669-5 | TO-220-5 |
| Channel Mode | Enhancement | Enhancement | Enhancement | -- |
| Action |
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