NXP Semiconductors PSMN016-100YS,115 MOSFETs
N-channel 100 V 16 mΩ standard level MOSFET in LFPAK
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
PSMN016-100YS,115
Detailed Description
N-channel 100 V 16 mΩ standard level MOSFET in LFPAK
Package
SOT-669-5
Lifecycle Status
Active
Datasheet
PSMN016-100YS,115 Datasheet
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Technical Specifications
NXP Semiconductors PSMN016-100YS,115 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 175°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
100 V
ID Continuous Drain Current
51 A
Rds on Drain Source Resistance
16.3 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (PSMN016-100YS,115 vs PSMN1R8-40YLC,115 vs PSMN011-30YLC,115 vs PSMN2R2-30YLC,115)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | SOT-669-5 | SOT-669-5 | SOT-669-5 | SOT-669-5 |
| Mounting Type | SMD/SMT | -- | SMD/SMT | SMD/SMT |
| Operating Temperature | - 55°C ~ + 175°C | -- | - 55°C ~ + 175°C | - 55°C ~ + 175°C |
| Number of Channels | 1 Channel | -- | 1 Channel | 1 Channel |
| Channel Mode | Enhancement | -- | Enhancement | Enhancement |
| ID Continuous Drain Current | 51 A | -- | 37 A | 100 A |
| Part Aliases | 934064533115 | -- | 934066011115 | 934065191115 |
| Pd Power Dissipation | 117 W | -- | 29 W | 141 W |
| Qg Gate Charge | 54 nC | -- | 10.3 nC | 55 nC |
| Rds on Drain Source Resistance | 16.3 mOhms | -- | 11.6 mOhms | 2.15 mOhms |
| Technology | Si | -- | Si | Si |
| Action |
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