NXP Semiconductors PSMN1R8-40YLC,115 MOSFETs
Trans MOSFET N-CH 40V 100A 5-Pin(4+Tab) LFPAK / N-channel 40 V 1.8 mΩ logic level MOSFET in LFPAK using NextPower technology
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
PSMN1R8-40YLC,115
Base Model
Detailed Description
Trans MOSFET N-CH 40V 100A 5-Pin(4+Tab) LFPAK / N-channel 40 V 1.8 mΩ logic level MOSFET in LFPAK using NextPower technology
Package
SOT-669-5
Lifecycle Status
Production
Datasheet
PSMN1R8-40YLC,115 Datasheet
Quick Jump:
Technical Specifications
NXP Semiconductors PSMN1R8-40YLC,115 MOSFETs technical specifications.
General
RoHS
Yes
Lifecycle Status
Production
Type Number
PSMN1R8-40YLC
Channel Type
N
Nr of Transistors
1
Vds Max V
40
Rdson Max Vgs 10 Vm
1.8
Rdson Max Vgs 4 5 Vm
2.1
Tj Max C
175
ID Max a
100
Alternate Parts Comparison (PSMN1R8-40YLC,115 vs PSMN1R8-40YLC,115 vs PSMN1R8-40YLC vs PSMN1R8-30MLHX)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes with Exemption | Yes with Exemption | Yes |
| Package | SOT-669-5 | LFPAK | LFPAK | LFPAK33 |
| Channel Type | N | N | N | -- |
| Mounting Type | -- | Surface Mount | Surface Mount | SMD/SMT |
| Operating Temperature | -- | -55°C ~ 175°C | -55°C ~ 175°C | - 55°C ~ + 175°C |
| Channel Mode | -- | Enhancement | Enhancement | Enhancement |
| Configuration | -- | Single Triple Source | Single Triple Source | Single |
| Action |
More Parts in MOSFETs
Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.
PSMN1R8-40YLC,115NexperiaN-channel enhancement mode power MOSFET featuring 40V drain-source voltage and 100A continuous drain current.
PSMN1R8-30MLHXNexperiaPSMN1R8-30MLH - N-channel 30 V, 2.1 mΩ, 150 A logic level MOSFET in LFPAK33 using NextPowerS3 technology
PSMN1R8-40YLCNexperiaN-channel Power MOSFET, 40V drain-source voltage, 100A continuous drain current.