Nexperia PSMN1R8-40YLC MOSFETs
N-channel Power MOSFET, 40V drain-source voltage, 100A continuous drain current.
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
PSMN1R8-40YLC
Base Model
Detailed Description
N-channel Power MOSFET, 40V drain-source voltage, 100A continuous drain current. Features 1.8mΩ maximum drain-source resistance at 10V Vgs. Surface mountable in a 5-pin LFPAK package (4 pins + tab), JEDEC MO-235 compliant. Operates from -55°C to 175°C with 272W maximum power dissipation.
Package
LFPAK
Key Features
Package: LFPAK
Lifecycle Status
Active
RoHS State
Yes with Exemption
Datasheet
PSMN1R8-40YLC Datasheet
Quick Jump:
Technical Specifications
Nexperia PSMN1R8-40YLC MOSFETs technical specifications.
General
RoHS
Yes with Exemption
Number of Pins
5
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C
Package
LFPAK
Pcb
4
Tab
Tab
Package Length Mm
5(Max)
Package Width Mm
4.1(Max)
Package Height Mm
1.1(Max)
Alternate Parts Comparison (PSMN1R8-40YLC vs PSMN1R8-40YLC,115 vs PSMN1R8-30MLHX vs PSMN1R8-40YLC,115)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes with Exemption | Yes | Yes | Yes with Exemption |
| Package | LFPAK | SOT-669-5 | LFPAK33 | LFPAK |
| Mounting Type | Surface Mount | -- | SMD/SMT | Surface Mount |
| Operating Temperature | -55°C ~ 175°C | -- | - 55°C ~ + 175°C | -55°C ~ 175°C |
| Channel Mode | Enhancement | -- | Enhancement | Enhancement |
| Channel Type | N | N | -- | N |
| Configuration | Single Triple Source | -- | Single | Single Triple Source |
| Action |
Nexperia PSMN1R8-40YLC MOSFETs Overview
N-channel Power MOSFET, 40V drain-source voltage, 100A continuous drain current. Features 1.8mΩ maximum drain-source resistance at 10V Vgs. Surface mountable in a 5-pin LFPAK package (4 pins + tab), JEDEC MO-235 compliant. Operates from -55°C to 175°C with 272W maximum power dissipation.
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