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Microsemi TCS1200 RF BJT

TCS1200 by Microsemi · RF BJT · 55TU-1

In StockMicrosemi55TU-1
TCS1200 55TU-1 package illustration

Same model may have multiple batches, images only for reference.

TCS1200
Manufacturer
Part Number (MPN)
TCS1200
Package
55TU-1
Lifecycle Status
Obsolete
Datasheet
PDF TCS1200 Datasheet
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Technical Specifications

Microsemi TCS1200 RF BJT technical specifications.

General

Package / Case
Bulk
Mounting Type
Chassis Mount
Operating Temperature
200°C (TJ)
Lifecycle Status
Obsolete
Current Collector IC Max
60 A
Dc Current Gain Hfe Min IC Vce
20 @ 1A, 5V
Frequency Transition
1.03 GHz
Gain
10.2dBd
Power Max
2095 W
Transistor Type
NPN

Alternate Parts Comparison (TCS1200 vs TCS800 vs MS2201 vs SD1224)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseBulkBulkM220M135
Mounting TypeChassis MountChassis MountChassis MountChassis Mount
Operating Temperature200°C (TJ)230°C (TJ)200°C (TJ)200°C (TJ)
Current Collector IC Max60 A50 A250mA5A
Dc Current Gain Hfe Min IC Vce20 @ 1A, 5V20 @ 5A, 5V0.95 @ 10mA, 5V20 @ 500mA, 5V
Frequency Transition1.03 GHz1.03 GHz1.025GHz ~ 1.15GHz175MHz
Gain10.2dBd8dB ~ 9dB9dB7.6dB
Power Max2095 W1944 W10W60W
Transistor TypeNPNNPNNPNNPN
Voltage Collector Emitter Breakdown Max65 V65 V45V35V
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