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Microsemi TCS800 RF BJT

TCS800 by Microsemi · RF BJT · 55SM

In StockMicrosemi55SM
TCS800 55SM package illustration

Same model may have multiple batches, images only for reference.

TCS800
Manufacturer
Part Number (MPN)
TCS800
Package
55SM
Lifecycle Status
Obsolete
Datasheet
PDF TCS800 Datasheet
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Technical Specifications

Microsemi TCS800 RF BJT technical specifications.

General

Package / Case
Bulk
Mounting Type
Chassis Mount
Operating Temperature
230°C (TJ)
Lifecycle Status
Obsolete
Current Collector IC Max
50 A
Dc Current Gain Hfe Min IC Vce
20 @ 5A, 5V
Frequency Transition
1.03 GHz
Gain
8dB ~ 9dB
Power Max
1944 W
Transistor Type
NPN

Alternate Parts Comparison (TCS800 vs TCS1200 vs MS2201 vs SD1224)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseBulkBulkM220M135
Mounting TypeChassis MountChassis MountChassis MountChassis Mount
Operating Temperature230°C (TJ)200°C (TJ)200°C (TJ)200°C (TJ)
Current Collector IC Max50 A60 A250mA5A
Dc Current Gain Hfe Min IC Vce20 @ 5A, 5V20 @ 1A, 5V0.95 @ 10mA, 5V20 @ 500mA, 5V
Frequency Transition1.03 GHz1.03 GHz1.025GHz ~ 1.15GHz175MHz
Gain8dB ~ 9dB10.2dBd9dB7.6dB
Power Max1944 W2095 W10W60W
Transistor TypeNPNNPNNPNNPN
Voltage Collector Emitter Breakdown Max65 V65 V45V35V
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