Microsemi JANTX2N4957 RF BJT
JANTX2N4957 by Microsemi · RF BJT · TO-66-3
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
JANTX2N4957
Package
TO-66-3
Lifecycle Status
Active
Datasheet
JANTX2N4957 Datasheet
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Technical Specifications
Microsemi JANTX2N4957 RF BJT technical specifications.
General
RoHS
Yes
Feature Type
PNP
Feature Material
Si
Feature Configuration
Single
Feature Number of Elements Per Chip
1
Feature Maximum Collector Base Voltage V
30
Feature Maximum Collector Emitter Voltage V
30
Feature Maximum Emitter Base Voltage V
3
Feature Maximum Dc Collector Current a
0.03
Feature Operational Bias Conditions
10V/2mA
Alternate Parts Comparison (JANTX2N4957 vs JANTX2N2857 vs JANTX2N4957UB vs JANTX2N2857UB)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | TO-66-3 | TO-72-3MetalCan | 3-SMD,NoLead | Case UB-4 |
| Feature AEC Qualified | No | -- | -- | No |
| Feature Auto Motive | No | -- | -- | No |
| Feature Cecc Qualified | No | -- | -- | No |
| Feature Configuration | Single | -- | -- | Single |
| Feature Material | Si | -- | -- | Si |
| Feature Maximum Collector Base Voltage V | 30 | -- | -- | 30 |
| Feature Maximum Collector Emitter Voltage V | 30 | -- | -- | 15 |
| Feature Maximum Dc Collector Current a | 0.03 | -- | -- | 0.04 |
| Feature Maximum Emitter Base Voltage V | 3 | -- | -- | 3 |
| Feature Maximum Noise Figure Db | 3.5 | -- | -- | 4.5(Typ) |
| Action |
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