CEL (California Eastern Laboratories) 2SC5606-T1-A RF BJT
2SC5606-T1-A by CEL (California Eastern Laboratories) · RF BJT · SOT-523
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
2SC5606-T1-A
Package
SOT-523
Lifecycle Status
Obsolete
Datasheet
2SC5606-T1-A Datasheet
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Technical Specifications
CEL (California Eastern Laboratories) 2SC5606-T1-A RF BJT technical specifications.
General
RoHS
Yes
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Lifecycle Status
Obsolete
Transistor Type
NPN
Voltage Collector Emitter Breakdown Max
3.3V
Frequency Transition
21GHz
Noise Figure Db Typ F
1.2dB @ 2GHz
Gain
14dB
Power Max
115mW
Alternate Parts Comparison (2SC5606-T1-A vs 2SC5015-T1-A vs 2SC5508-T2-A vs NESG2107M33-A)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) |
| Current Collector IC Max | 35mA | 30mA | 35mA | 100mA |
| Dc Current Gain Hfe Min IC Vce | 60 @ 5mA, 2V | 75 @ 10mA, 3V | 50 @ 5mA, 2V | 140 @ 5mA, 1V |
| Frequency Transition | 21GHz | 12GHz | 25GHz | 10GHz |
| Gain | 14dB | 11dB | 17dB | 7dB ~ 10dB |
| Noise Figure Db Typ F | 1.2dB @ 2GHz | 1.5dB @ 2GHz | 1.1dB @ 2GHz | 0.9dB ~ 1.5dB @ 2GHz |
| Power Max | 115mW | 150mW | 115mW | 130mW |
| Transistor Type | NPN | NPN | NPN | NPN |
| Voltage Collector Emitter Breakdown Max | 3.3V | 6V | 3.3V | 5V |
| Package / Case | -- | SC-82A, SOT-343 | SOT-343F | 3-SMD, Flat Lead |
| Action |
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