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CEL (California Eastern Laboratories) NE85619-T1 RF BJT

NE85619-T1 by CEL (California Eastern Laboratories) · RF BJT · SOT-523

In StockCEL (California Eastern Laboratories)SOT-523
NE85619-T1 SOT-523 package illustration

Same model may have multiple batches, images only for reference.

NE85619-T1
Part Number (MPN)
NE85619-T1
Package
SOT-523
Lifecycle Status
Obsolete
Datasheet
PDF NE85619-T1 Datasheet
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Technical Specifications

CEL (California Eastern Laboratories) NE85619-T1 RF BJT technical specifications.

General

RoHS
Yes
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Lifecycle Status
Obsolete
Transistor Type
NPN
Voltage Collector Emitter Breakdown Max
12V
Frequency Transition
4.5GHz
Noise Figure Db Typ F
1.4dB ~ 2.2dB @ 1GHz ~ 2GHz
Gain
6.5dB ~ 12.5dB
Power Max
100mW

Related Parts Comparison (NE85619-T1 vs NE664M04-T2-A vs NE461M02-T1-QR-AZ vs NE68019-A)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature150°C (TJ)150°C (TJ)150°C (TJ)150°C (TJ)
RoHSYesYesYesYes
Lifecycle StatusObsoleteObsoleteObsoleteObsolete
Current Collector IC Max100mA500mA250mA35mA
Dc Current Gain Hfe Min IC Vce80 @ 20mA, 10V40 @ 100mA, 3V60 @ 50mA, 10V80 @ 5mA, 3V
Gain6.5dB ~ 12.5dB12dB8.3dB9.6dB
PackageSOT-523Tape & Reel (TR)Tape & Reel (TR)SOT-523
Power Max100mW735mW2W100mW
Transistor TypeNPNNPNNPNNPN
Voltage Collector Emitter Breakdown Max12V5V15V10V
Frequency Transition4.5GHz20GHz--10GHz
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